Results 151 to 160 of about 122,511 (209)

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Differential BroadBand (1-16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing. [PDF]

Sensors (Basel)
Jimenez-Martin JL, Gonzalez-Posadas V, Parra-Cerrada A, Espinosa-Adams D, Segovia-Vargas D, Hernandez W.   +5 more
europepmc   +1 more source

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Broadband multi-beam lens-assisted mmID enabling multi-gigabit backscatter data rates for next-generation wireless networks. [PDF]

Nat Commun
Joshi M, Lynch Iii CA, Hu K, Mensah YA, Cressler JD, Tentzeris MM.   +5 more
europepmc   +1 more source

Temperature Characteristics Modeling for GaN PA Based on PSO-ELM. [PDF]

Micromachines (Basel)
Lin Q, Wang M.
europepmc   +1 more source

Advanced Dielectric Resonator Antenna Technology for 5G and 6G Applications. [PDF]

Sensors (Basel)
Zhang Y, Ogurtsov S, Vasilev V, Kishk AA, Caratelli D.   +4 more
europepmc   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics, 2021
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO).
Artem A Popov, Dmitry Bragin, Igor Dobush   +2 more
exaly   +2 more sources

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

, 2013
We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs).
Helena Rodilla, J Schleeh, N Wadefalk
exaly   +2 more sources

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Burnout Properties of Microwave Pulse Injected on GaAs PHEMT

Microelectronics Reliability, 2015
Abstract The burnout properties of microwave pulse injected on the low noise amplifier (LNA) based on a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) are experimentally investigated by means of a microwave pulse injection at 1.5 GHz, 45 ns.
Cunbo Zhang, Jian-de Zhang, Honggang Wang 0003, Guangxing Du   +3 more
exaly   +3 more sources