Results 131 to 140 of about 219 (168)

GaAs pHEMT MMIC of the ultra broadband amplifier

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010
There is an example of ultra broadband amplifier MMIC design based on GaAs pHEMT process. Operating frequency band is 1–4 GHz, gain is 18 dB, noise factor is lesser 2.6 dB, input/output reflection factor is less − 15 dB, unipolar power is + 5 V, consumption current is 50 mA, chip dimension is 2.5 × 1.5 × 0.1 mm.
A. A. Barov, A. V. Kondratenko
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Temperature, humidity, and bias acceleration model for a GaAs pHEMT process

Microelectronics Reliability, 2015
Abstract This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process.
exaly   +2 more sources

A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator

IEICE Transactions on Electronics, 2013
exaly   +2 more sources

K-Band monolithic GaAs PHEMT amplifiers

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000
This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
Lin, Kun-You, Deng, Kuo-Liang, Kuo, Po-Wei, Yang, Shin-Der, Wang, Huei, Chu, Tah-Hsiung   +5 more
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Drain Corrosion in RF Power GaAs PHEMTs

2007 IEEE International Electron Devices Meeting, 2007
We have investigated drain degradation in a set of experimental RF power GaAs PHEMTs. Drain degradation was observed in the form of an increase in RD and a reduction in Imax in a variety of conditions. We found that both forms of degradation arise from surface corrosion that takes place on different locations on the drain and dominate in different ...
A. Villanueva, J.A. del Alamo, T. Hisaka, T. Ishida   +3 more
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150 GHz GaAs amplifiers in a commercial 0.1-μm GaAs PHEMT process

2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016
150 GHz amplifiers fabricated on a commercial GaAs process with an f T of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz.
Alex Bessemoulin, Melissa C. Rodriguez, Simon J. Mahon, Anthony E. Parker, Michael C. Heimlich   +4 more
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The temperature dependency of a GaAs pHEMT wideband IQ modulator IC

Proceedings. 2004 IEEE Radio and Wireless Conference (IEEE Cat. No.04TH8746), 2005
The author developed a GaAs wideband IQ modulator IC, which is utilized in Agilent RF signal source instruments. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift performance is poorer in some frequency ranges than the first generation of IC which has the same architecture. This paper presents
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Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), 1998
A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT ...
H.J. Siweris, A. Werthof, H. Tischer, U. Schaper, A. Schafer, L. Verweyen, T. Grave, G. Bock, M. Schlechtweg, W. Kellner   +9 more
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A 1.4 watt Q-band GaAs PHEMT MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 2002
A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA.
S.J. Nash, A. Platzker, R. Wohlert, C. Liss   +3 more
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Source-pull noise characterization of GaAs pHEMTs

2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012
The paper presents results of the four noise parameter measurement of GaAs pseudomorflc high electron mobility transistors (pHEMTs) in the frequency range 0.8–8 GHz. The parameters were determined using an own complex noise characterization method based on the eigth-term linear noise model.
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