A Quasi-Lumped Element Tunable Bandpass Filter Based on GaAs Technology. [PDF]
Micromachines (Basel)Cheng X, You B.
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A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]
Sensors (Basel), 2023 Pagnini L, Collodi G, Cidronali A.
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Editorial for the Special Issue on Broadband Terahertz Devices and Communication Technologies, 2nd Edition. [PDF]
Micromachines (Basel)Zhang J, Zhang L, Wang K, Yu X.
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A low noise cascaded amplifier for the ultra-wide band receiver in the biosensor. [PDF]
Sci Rep, 2021 Daoud M, Ghorbel M, Mnif H.
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High voltage GaAs pHEMT technology for S-band high power amplifiers
, 2007 High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since 2000, resulting in three processes that deliver state of the art performance up to Ku-band.
Evans, S +10 more
core
Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness. [PDF]
Sci RepLiao S, Xu J, Yang J, Xie Q, Jiang Q.
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Car2Car Communication Using a Modulated Backscatter and Automotive FMCW Radar. [PDF]
Sensors (Basel), 2021 Lazaro A +4 more
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Design of a UWB Interference-Rejection LNA Based on a Q-Enhanced Notch Filter. [PDF]
Micromachines (Basel)Li J, Fan Y, Meng F.
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A Wideband and High-Power RF Switching Design. [PDF]
Sensors (Basel)Huang X, Chen C, Zhou S.
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