Results 131 to 140 of about 223 (167)
Some of the next articles are maybe not open access.
GaAs MMIC pHEMT gate metal thermometry
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias.
Bryan K. Schwitter +4 more
openaire +1 more source
Characterisation of GaAs pHEMT Transient Thermal Response
2018 13th European Microwave Integrated Circuits Conference (EuMIC), 2018Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery ...
Bryan K. Schwitter +3 more
openaire +1 more source
AlGaAs/InGaAs/GaAs heterostructures based pHEMT
12th International Conference Microwave and Telecommunication Technology, 2002The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm/sup 2//(V/spl middot/s) and surface electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ at room temperature.
N.A. Maleev +5 more
openaire +1 more source
A Temperature-dependent Current Model for Phemt on Gaas
Journal of Electromagnetic Waves and Applications, 2008Modified current model has been developed to more accurately model the current-voltage characteristics of GaAs pHEMTs over a wide range of temperature. In particular, the modeling accuracy of knee, saturation and subthreshold regions has been greatly improved.
L. Wang, R. M. Xu, Y. C. Guo, B. Yan
openaire +1 more source
GaAs pHEMT MMIC of the ultra broadband amplifier
2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010There is an example of ultra broadband amplifier MMIC design based on GaAs pHEMT process. Operating frequency band is 1–4 GHz, gain is 18 dB, noise factor is lesser 2.6 dB, input/output reflection factor is less − 15 dB, unipolar power is + 5 V, consumption current is 50 mA, chip dimension is 2.5 × 1.5 × 0.1 mm.
A. A. Barov, A. V. Kondratenko
openaire +1 more source
K-Band monolithic GaAs PHEMT amplifiers
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
Lin, Kun-You +5 more
openaire +2 more sources
The temperature dependency of a GaAs pHEMT wideband IQ modulator IC
Proceedings. 2004 IEEE Radio and Wireless Conference (IEEE Cat. No.04TH8746), 2005The author developed a GaAs wideband IQ modulator IC, which is utilized in Agilent RF signal source instruments. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift performance is poorer in some frequency ranges than the first generation of IC which has the same architecture. This paper presents
openaire +1 more source
Drain Corrosion in RF Power GaAs PHEMTs
2007 IEEE International Electron Devices Meeting, 2007We have investigated drain degradation in a set of experimental RF power GaAs PHEMTs. Drain degradation was observed in the form of an increase in RD and a reduction in Imax in a variety of conditions. We found that both forms of degradation arise from surface corrosion that takes place on different locations on the drain and dominate in different ...
A. Villanueva +3 more
openaire +1 more source
Source-pull noise characterization of GaAs pHEMTs
2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012The paper presents results of the four noise parameter measurement of GaAs pseudomorflc high electron mobility transistors (pHEMTs) in the frequency range 0.8–8 GHz. The parameters were determined using an own complex noise characterization method based on the eigth-term linear noise model.
openaire +1 more source
150 GHz GaAs amplifiers in a commercial 0.1-μm GaAs PHEMT process
2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016150 GHz amplifiers fabricated on a commercial GaAs process with an f T of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz.
Alex Bessemoulin +4 more
openaire +1 more source