Results 121 to 130 of about 223 (167)

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]

Sensors (Basel)
Delwar TS, Aras U, Siddique A, Lee Y, Ryu JY.   +4 more
europepmc   +1 more source

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Burnout properties of microwave pulse injected on GaAs PHEMT

Microelectronics Reliability, 2015
Abstract The burnout properties of microwave pulse injected on the low noise amplifier (LNA) based on a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) are experimentally investigated by means of a microwave pulse injection at 1.5 GHz, 45 ns.
Jiande Zhang
exaly   +2 more sources

Temperature, humidity, and bias acceleration model for a GaAs pHEMT process

Microelectronics Reliability, 2015
Abstract This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process.
exaly   +2 more sources

Prepared for GaAs PHEMT Material

Advanced Materials Research, 2012
In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
openaire   +1 more source

Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
openaire   +1 more source

A 3.5GHz GaAs pHEMT Power Amplifier

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018
In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu, Qianyin Xiang, Mingye Fu, Quanyuan Feng   +3 more
openaire   +1 more source

Degradation mechanisms of GaAs PHEMTs in high humidity conditions

JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004., 2004
Abstract We have studied the degradation mechanisms of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under high humidity conditions (85 °C, 85% relative humidity). The degraded samples under high humidity conditions show a decrease in maximum drain current (Imax) and a positive shift in threshold voltage (Vth).
Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi   +6 more
openaire   +1 more source

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

Journal of Electronic Materials, 1995
Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 1012 cm2 −2 and the mobilities were 5,920 and 22,000 cm2
Jones, K. A., Lareau, R. T., Monahan, T., Flemish, J. R., Pfeffer, R. L., Sherriff, R. E., Litton, Cole W., Jones, R. L., Stutz, C. E., Look, David C.   +9 more
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Suppression of electrochemical etching effects in GaAs PHEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003
The electrochemical etching effect is investigated in the recess etching of GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs). It is demonstrated that the electrochemical etching due to the exposed ohmic metals seriously effects the etch rate of InGaAs/AlGaAs and furthermore the production uniformity and yield.
Y. Zhao, Y. Tkachenko, D. Bartle
openaire   +1 more source