Results 121 to 130 of about 219 (168)

Prepared for GaAs PHEMT Material

Advanced Materials Research, 2012
In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
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A 3.5GHz GaAs pHEMT Power Amplifier

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018
In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu, Qianyin Xiang, Mingye Fu, Quanyuan Feng   +3 more
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Degradation mechanisms of GaAs PHEMTs in high humidity conditions

JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004., 2004
Abstract We have studied the degradation mechanisms of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under high humidity conditions (85 °C, 85% relative humidity). The degraded samples under high humidity conditions show a decrease in maximum drain current (Imax) and a positive shift in threshold voltage (Vth).
Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi   +6 more
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Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

Journal of Electronic Materials, 1995
Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 1012 cm2 −2 and the mobilities were 5,920 and 22,000 cm2
Jones, K. A., Lareau, R. T., Monahan, T., Flemish, J. R., Pfeffer, R. L., Sherriff, R. E., Litton, Cole W., Jones, R. L., Stutz, C. E., Look, David C.   +9 more
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Suppression of electrochemical etching effects in GaAs PHEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003
The electrochemical etching effect is investigated in the recess etching of GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs). It is demonstrated that the electrochemical etching due to the exposed ohmic metals seriously effects the etch rate of InGaAs/AlGaAs and furthermore the production uniformity and yield.
Y. Zhao, Y. Tkachenko, D. Bartle
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GaAs MMIC pHEMT gate metal thermometry

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias.
Bryan K. Schwitter, Anthony E. Parker, Sayed A. Albahrani, Anthony P. Fattorini, Michael C. Heimlich   +4 more
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A Temperature-dependent Current Model for Phemt on Gaas

Journal of Electromagnetic Waves and Applications, 2008
Modified current model has been developed to more accurately model the current-voltage characteristics of GaAs pHEMTs over a wide range of temperature. In particular, the modeling accuracy of knee, saturation and subthreshold regions has been greatly improved.
L. Wang, R. M. Xu, Y. C. Guo, B. Yan
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Characterisation of GaAs pHEMT Transient Thermal Response

2018 13th European Microwave Integrated Circuits Conference (EuMIC), 2018
Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery ...
Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon, Michael C. Heimlich   +3 more
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AlGaAs/InGaAs/GaAs heterostructures based pHEMT

12th International Conference Microwave and Telecommunication Technology, 2002
The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm/sup 2//(V/spl middot/s) and surface electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ at room temperature.
N.A. Maleev, A.E. Zhukov, A.P. Kovsh, V.M. Ustinov, V.I. Khitko, A.S. Shulenkov   +5 more
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