Results 101 to 110 of about 122,511 (209)

A 2-38 GHz Linear GaAs pHEMT TIA for a Quasi-Coherent Optical Receiver

, 2019
This paper presents the design and testing of a linear transimpedance amplifier (TIA) in a GaAs pHEMT technology. The TIA has been developed for integration within an optical receiver using a quasi-coherent technology.
Didriksen, Morten, Guillermo Silva Valdecasa, Jesper Bevensee Jensen, Silva Valdecasa, Guillermo, Johansen, Tom Keinicke, Morten Didriksen, Jensen, Jesper Bevensee, Tom K. Johansen   +7 more
core   +1 more source

A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT

IEEE Access
This paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen, Li Gao, Xiu Yin Zhang, Yanjie Wang   +3 more
doaj   +1 more source

Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors

, 2002
Low temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors (PHEMTs) with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum well PL transition energies compared to a ...
W Xu (7428281), P A Folkes (20238921), G Gumbs (20238924)   +2 more
core  

Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line. [PDF]

Micromachines (Basel), 2023
He D, Fan J, Zhu Z, Yuan Y, Yu Z.
europepmc   +1 more source

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

, 1999
The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end.
Martins, E. [UNESP], Swart, J. W., Gomes, M. V G [UNESP], Gomes, M. V. G., Bastida, E. M., Bastida, E. M. [UNESP], Swart, J. W. [UNESP], Gomes, M. V G, Martins, E., Fragnito, H. L., J.W. Swart, HernandezFigueroa, H. E., M.V.G. Gomes, E. Martins, E.M. Bastida   +14 more
core   +1 more source

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]

Sci Rep, 2022
Zhao J, Chen Q, Chen C, Chen Z, Liu Z, Zhao G.   +5 more
europepmc   +1 more source

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications. [PDF]

Sensors (Basel), 2023
Galante-Sempere D, Khemchandani SL, Del Pino J.   +2 more
europepmc   +1 more source

An optimization design scheme applied to multi-modules cascading of transceiver IC

Dianzi Jishu Yingyong
In this paper, a novel optimization design scheme is proposed to solve the cascading mismatch problem of sub-circuits in beamforming chips due to parasitic effects.
Yu Qiushi, Guo Runnan, Chen Hao, Zhuang Yuan, Liang Yun, Yan Yujun, Wu Xia, Ge Fengchun, Wang Weibo, Tao Hongqi   +9 more
doaj   +1 more source

Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System. [PDF]

Sensors (Basel), 2022
Chen X, Hu A, Gong J, Altaf A, Miao J.
europepmc   +1 more source

A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application. [PDF]

Micromachines (Basel), 2022
Zhou P, Wang C, Sun J, Chen Z, Chen J, Hong W.   +5 more
europepmc   +1 more source