Local self-heating in short gate GaAs PHEMTs
, 1996 Self heating in ultrashort gate length GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) is investigated. The experimental results include an original measurement of the average temperature in the gate drain area of the device channel. An original model which accounts for both bidimensional heat transfer and quasi bidimensional energy ...
Aniel, F. +5 more
openaire +2 more sources
Improvement of phemt intermodulation prediction through the accurate modelling of low-frequency dispersion effects [PDF]
, 2005 Large-signal dynamic modelling of III-V FETs cannot be simply based on de i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level ...
Filicori, F. +7 more
core +1 more source
LFI 30 and 44 GHz receivers Back-End Modules [PDF]
, 2009 The 30 and 44 GHz Back End Modules (BEM) for the Planck Low Frequency Instrument are broadband receivers (20% relative bandwidth) working at room temperature.
A Mediavilla +28 more
core +2 more sources
A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside
IEEE Journal of the Electron Devices Society, 2013 This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev +5 more
doaj +1 more source
Co-fabrication of planar Gunn diode and HEMT on InP substrate [PDF]
, 2014 We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) on an Indium Phosphide (InP) substrate for the first time. Electron beam lithography (EBL) has been used extensively for the complete fabrication procedure
Cumming, David R.S. +3 more
core +1 more source
Modelování nelineárních prvků vysokofrekvenčních obvodů neuronovými sítěmi [PDF]
, 2012 Katedra ...
Pospíšil, Ladislav
core
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
Enhancing the Accuracy of Microwave Element Models by Artificial Neural Networks [PDF]
, 2004 In the recent PSpice programs, five types of the GaAs FET model have been implemented. However, some of them are too sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern.
Dobes, J., Pospisil, L.
core +1 more source
Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology [PDF]
, 2003 An innovative technique for high--density, high-frequency integrated circuit design is proposed.The procedure exploits the potentialities of a global modeling approach,previously applied only at device level,enabling the circuit designer to explore ...
Cidronali, A. +4 more
core +1 more source
Design of a Broadband Amplifier for High Speed Applications [PDF]
, 2002 This paper provides comprehensive insight into the design approach followed for an amplifier dedicated to high speed base band signals. To demonstrate the methodology, an amplifier consisting of nine PHEMT cascode cells within a distributed amplifier ...
Camargo, E. +4 more
core +1 more source