High-breakdown AlGaAs/InGaAs/GaAs PHEMT with telluriumdoping
Electronics Letters, 1995 The authors report the fabrication and characterisation of an Al/sub 0.43/Ga/sub 0.57/As/In/sub 0.2/Ga/sub 0.8/As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using ...
N.X. Nguyen +3 more
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High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques [PDF]
, 2008 Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services.
Bai, Dafu, Bai, Dafu
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Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors [PDF]
, 2017 We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications.
Chow T. Paul +4 more
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Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs [PDF]
Solid-State Electronics, 2003 Abstract The temperature-dependent DC characteristics and noise performance of In 0.49 Ga 0.51 P/In 0.15 Ga 0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm 2 are investigated at 12 GHz with temperature ranging from 300 to 450 K.
H.K. Huang +4 more
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Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy [PDF]
, 2003 An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy.
Asenov, A. +8 more
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Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing
, 2015 International audienceAccelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies.
Adokanou, Kokou +4 more
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Design of cryogenic 700 MHz HEMT amplifier [PDF]
, 2004 We present a way to design a high-frequency low-temperature pHEMT-based balanced amplifier. The design is based on measured cryogenic S-parameters combined with a small-signal noise model.
Hakonen, Pertti J., Roschier, Leif
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An Ultra-Wideband Digitally Programmable Power Amplifier with Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards [PDF]
, 2016 The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several ...
Albasha, Lutfi +7 more
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GaAs pHEMT Cascode Low Noise Amplifier for Wireless Applications [PDF]
International Journal of Computer and Electrical Engineering, 2009 104 Abstract—This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency.
Arjuna Marzuki +8 more
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An approach to harmonic load- and source-pull measurements for high-efficiency PA design [PDF]
, 2004 High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to
Colantonio, P. +3 more
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