Results 91 to 100 of about 122,511 (209)

1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. [PDF]

, 2000
The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs power pHEMT are reported. This structure was optimized to obtain a quasi flat transconductance profile to increase the device linearity near the compression.
Mallet, A., Boudart, B., Cazaux, Jean-Louis, Lapierre, L., Bonte, B., Hue, X., Crosnier, Y., Rogeaux, E.   +7 more
core   +1 more source

Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/

, 2002
This paper presents the use of a nonlinear TOPAS/sup TM/ model to describe the behaviour of an AlGaAs/InGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented
Elgaid, K., Robertson, I.D., Lucyszyn, S., McPherson, D.S., Thayne, I.G., D.S. McPherson, K. Elgaid, I.G. Thayne, S. Lucyszyn, I.D. Robertson   +9 more
core   +1 more source

Quantum-well infrared phototransistor with pHEMT structure [PDF]

, 2005
A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al0.3Ga0.7As (50 angstrom/120 angstrom) quantum-well absorption region,
Yang, Jong Ryul, Oum, Joon Ho, Lee, Uk Hyun, Kang, Yong Hoon, Hong, Songcheol   +4 more
core   +1 more source

Local self-heating in short gate GaAs PHEMTs

, 1996
Self heating in ultrashort gate length GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) is investigated. The experimental results include an original measurement of the average temperature in the gate drain area of the device channel. An original model which accounts for both bidimensional heat transfer and quasi bidimensional energy ...
Aniel, F., Lepaul, S., Peymayeche, L., De Lustrac, A., Bouillault, F., Adde, R.   +5 more
openaire   +2 more sources

Novel Esd Protection Solution For Single-Ended Mixer In Gaas Phemt Technology

, 2013
This paper develops an improved electrostatic discharge (ESD) protection solution built with a novel dual-gate, depletion-mode pHEMT device in the GaAs technology.
Cui, Qiang, Zhang, Shuyun, Liou, Juin J.
core   +2 more sources

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

, 2014
We present a comparative study of InGaAs/InAlAs high electron mobility transistors (HEMTs), intended for cryogenic ultra-low noise amplifiers (LNAs) and fabricated on different substrate and buffer technologies.
Rodilla, Helena, Rodilla, Helena,, Grahn, Jan, Grahn, Jan,, Schleeh, Joel, Wadefalk, Niklas, Schleeh, Joel,, Wadefalk, Niklas,, Nilsson, Per-Åke,, Nilsson, Per-\uc5ke, Nilsson, Per-Åke   +10 more
core   +1 more source

Design of an X-band high efficiency continuous-mode power amplifier

Dianzi Jishu Yingyong
To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao, Yu Zhongjun, Fan Jingxin, Zhang Desheng   +3 more
doaj   +1 more source

Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications

, 2016
HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the ...
Ahmad, N., Isa, M. Mohamad, Khalid, N., Nor, N. I.M., Missous, M.; id_orcid, Ramli, Muhammad M., Isa, Siti S.Mat, Kasjoo, S. R., Xian, O. J., Siti S. Mat Isa, N.I.M. Nor, M. Missous, N. Ahmad, O.J. Xian, M. Mohamad Isa, N. Khalid, Muhammad M. Ramli, S.R. Kasjoo   +17 more
core   +1 more source

Design Methodology of an Inductorless GaAs pHEMT SPDT Switch With Compact Size for Sub-6 GHz Applications

IEEE Access
This paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodology focuses on optimizing the trade ...
Jaehyun Kwon, Jaeyong Lee, Jinho Yoo, Changkun Park   +3 more
doaj   +1 more source

A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]

Micromachines (Basel), 2023
He D, Yu Z, Chen J, Du K, Zhu Z, Cheng P, Tan C.   +6 more
europepmc   +1 more source