Results 81 to 90 of about 2,410 (220)
A compact 60‐GHz on‐chip bandpass filter in GaAs technology
Electronics Letters, Volume 60, Issue 7, April 2024.A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu +3 more
wiley +1 more source
The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj +1 more source
Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C [PDF]
, 2008 R. Akram, M.
Oral, Ahmet
core
On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices [PDF]
, 2004 Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level ...
Filicori, F. +4 more
core +1 more source
Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]
, 2015 Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
Cerny, D. +7 more
core +2 more sources
A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers
Electronics Letters, Volume 60, Issue 6, March 2024.This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano +6 more
wiley +1 more source
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
IEEE Access, 2022 The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on $0.15~\mu \text{m}$ GaAs pHEMT process are presented in this paper.
Jianhao Gong +5 more
doaj +1 more source
Upgrade of the Cold Electronics of the ATLAS HEC Calorimeter for sLHC [PDF]
, 2009 The signal amplification and summation electronics of the ATLAS Hadronic End-cap Calorimeter (HEC) is operated at the circumference of the HEC calorimeters inside the cryostats in liquid argon.
Dannheim, D +7 more
core +1 more source
High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication
Journal of Electronic Science and TechnologyIn the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid +4 more
doaj +1 more source