Results 81 to 90 of about 122,511 (209)
, 2020 In this paper, a frequency selective degeneration technique using a parallel network with a resistor and capacitor is proposed for a 6–18 GHz GaAs pseudomorphic high electron mobility transistor (pHEMT) broadband power amplifier integrated circuit (
Kang-Yoon Lee +7 more
core +1 more source
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz
, 2014 This paper presents a 33 dBm, 3-stage stacked GaAs pHEMT power amplifier at 22GHz with on-chip matching networks. The circuit topology is explained, and interstage matching techniques are simulated to investigate their aptitude to achieve interstage ...
Weigel, Robert +10 more
core +1 more source
Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]
, 2002 RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures ...
Duff, C, Sloan, R, R. Sloan, C. Duff
core +1 more source
Broadband GaAs pHemt LNA design for T/R module application
, 2016 In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz.
Phong Dai Le, Pham Le Binh, Vu Duy Thong
core +1 more source
Безопасность информационных технологийThis work is focused on the development and investigation of a planar diode element based on a thin tantalum nitride film and Ni/Ge/Au contact metallization for use in microwave monolithic integrated circuits (MMICs).
Konstantin S. Alekseev +5 more
doaj +1 more source
A Highly Integrated GaAs pHEMT Active Mixer for Wideband SAR Systems [PDF]
, 2004 This paper presents the design and performance of a GaAs pHEMT active mixer for wideband Synthetic Apertur Radar (SAR) systems. The active mixer is highly integrated and includes active baluns on the RF/LO ports, active combiner on the IF port and a ...
Krozer, Viktor +2 more
core +1 more source
Electrical Analysis and Measurement of Ⅲ-ⅤCompound pHEMT
, 2014 Ⅲ-Ⅴ族化合物半導體材料所製成之元件，具有高載子遷移率(mobility)、工作頻率高、射頻損耗低、高線性度、低雜訊等優勢，使得Ⅲ-Ⅴ族化合物半導體元件成為現今射頻通訊應用之關鍵部份。pHEMT為假晶高電子遷移率電晶體之簡稱。它具有體積小、臨界電壓低、功率消耗低、製程要求較單純等特色，因此成為重要之射頻主動元件。 本研究使用TCAD模擬軟體進行元件模擬，以研究pHEMT元件直流特性與材料結構之關係。本研究所模擬之蕭基層/通道層/緩衝層材料結構有三種，其分別為AlGaAs/GaAs/GaAs、AlGaAs/
韓季霖, Han, Chi-Lin
core
Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs
Acta Physica Sinica, 2003 In this paper, two-dimensional devices simulation program-MEDICI has been used to simulate AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). Doping and electron concentrations, current flow and gate characteristic in PHEMTs are studied.
null Liu Hong-Xia +4 more
openaire +1 more source
Transmit and receive amplifiers for E-band communications systems using GaAs pHEMT technology
, 2012 Measured performance is given for a transmit and a receive amplifier MMIC fabricated using the WINsemi PP10 GaAs pHEMT process in the band 71 to 76 GHz.
Chris Duff +11 more
core +1 more source
A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside
IEEE Journal of the Electron Devices Society, 2013 This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev +5 more
doaj +1 more source