Results 61 to 70 of about 223 (167)

Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques

IEEE Access, 2023
This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li, Jialong Zeng, Yang Yuan, Ding He, Jingxin Fan, Cheng Tan, Zhongjun Yu   +6 more
doaj   +1 more source

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Electronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu, Shangjing Xi, Hairui Liu, Shichang Chen   +3 more
wiley   +1 more source

Study of DX centers in AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. A major challenge in AlGaAs-based heterostructure devices is the presence of DX centers in heavily doped n-type layers. These deep donor traps degrade the performance of pseudomorphic high electron mobility transistors (pHEMTs).
A. V. Sapozhnikov, R. S. Kryukov, A. I. Baranov, A. L. Dudin, V. V. Perepelovskiy   +4 more
doaj   +1 more source

The MMIC design of GaAs bi-phase voltage variable attenuator

Dianzi Jishu Yingyong, 2019
A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj   +1 more source

A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

Electronics Letters, Volume 60, Issue 6, March 2024.
This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano, Joachim Hebeler, Alban Sherifaj, Fabian Thome, Christian Koos, Thomas Zwick, Akanksha Bhutani   +6 more
wiley   +1 more source

Thermal Characteristic Investigation for a Multichip Module Based on APDL

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.
Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin, Peng-Fei Zhao, Rui-lan Yang, Hai-feng Wu, Paolo Castaldo   +4 more
wiley   +1 more source

High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication

Journal of Electronic Science and Technology
In the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid, Ahmad N. Abdulfattah, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous   +4 more
doaj   +1 more source

Electrical degradation mechanisms of RF power GaAs PHEMTs [PDF]

IEEE International Electron Devices Meeting 2003, 2004
In this research, we have carried out a systematic investigation of the electrical degradation of RF power PHEMTs. By examining devices with different geometries as well as a variety of test structures, our research confirms previous observations of degradation under the gate of the device.
A.A. Villanueva, J.A. del Alamos, T. Hisaka, K. Hayashi   +3 more
openaire   +1 more source

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

IEEE Journal of the Electron Devices Society, 2013
This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev, Vadim S. Arykov, Ekaterina V. Anishchenko, Valery A. Kagadei, Sergey V. Ishutkin, Artyom I. Kazimirov   +5 more
doaj   +1 more source

High-breakdown AlGaAs/InGaAs/GaAs PHEMT with telluriumdoping

Electronics Letters, 1995
The authors report the fabrication and characterisation of an Al/sub 0.43/Ga/sub 0.57/As/In/sub 0.2/Ga/sub 0.8/As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using ...
N.X. Nguyen, W.-N. Jiang, K.A. Baumann, U.K. Mishra   +3 more
openaire   +1 more source