Results 61 to 70 of about 219 (168)

Active quasi circulator: Comprehensive review and performance comparison

Engineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan, Sujan Chowdhury, Hasan U. Zaman   +2 more
wiley   +1 more source

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Electronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu, Shangjing Xi, Hairui Liu, Shichang Chen   +3 more
wiley   +1 more source

A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

Electronics Letters, Volume 60, Issue 6, March 2024.
This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano, Joachim Hebeler, Alban Sherifaj, Fabian Thome, Christian Koos, Thomas Zwick, Akanksha Bhutani   +6 more
wiley   +1 more source

A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging

IEEE Access, 2022
The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on $0.15~\mu \text{m}$ GaAs pHEMT process are presented in this paper.
Jianhao Gong, Xi Chen, Wangdong He, Amjad Altaf, Anyong Hu, Jungang Miao   +5 more
doaj   +1 more source

Thermal Characteristic Investigation for a Multichip Module Based on APDL

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.
Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin, Peng-Fei Zhao, Rui-lan Yang, Hai-feng Wu, Paolo Castaldo   +4 more
wiley   +1 more source

High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication

Journal of Electronic Science and Technology
In the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid, Ahmad N. Abdulfattah, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous   +4 more
doaj   +1 more source

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Technical Physics Letters, 2022
The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100
null Pashkovsky A. B., null Yushchenko A. Y., null Ayzenshtat G. I., null Zhuravlev K. S., null Dmitriev D. V., null Protasov D. Yu.   +5 more
openaire   +1 more source

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

IEEE Journal of the Electron Devices Society, 2013
This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev, Vadim S. Arykov, Ekaterina V. Anishchenko, Valery A. Kagadei, Sergey V. Ishutkin, Artyom I. Kazimirov   +5 more
doaj   +1 more source

A general neuro-space mapping technique for microwave device modeling

EURASIP Journal on Wireless Communications and Networking, 2018
Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general neuro-space mapping (Neuro-SM) method is proposed to fulfill the needs of the increased modeling complexity ...
Lin Zhu, Jian Zhao, Zhuo Li, Wenyuan Liu, Lei Pan, Haifeng Wu, Deliang Liu   +6 more
doaj   +1 more source

High-breakdown AlGaAs/InGaAs/GaAs PHEMT with telluriumdoping

Electronics Letters, 1995
The authors report the fabrication and characterisation of an Al/sub 0.43/Ga/sub 0.57/As/In/sub 0.2/Ga/sub 0.8/As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using ...
N.X. Nguyen, W.-N. Jiang, K.A. Baumann, U.K. Mishra   +3 more
openaire   +1 more source