Results 61 to 70 of about 2,410 (220)
An X/Ku Dual-Band Switch-Free Reconfigurable GaAs LNA MMIC Based on Coupled Line
This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier (LNA) realized by inter-stage and output-stage coupled lines.
Chunshuang Xie, Zhongjun Yu, Cheng Tan
doaj +1 more source
Гетероструктуры AlGaAs/InGaAs/GaAs для ключевых pHEMT-транзисторов
The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm ...
openaire +1 more source
Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
This paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
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Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A. +6 more
core +1 more source
A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
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A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components.
Hao-Ran Zhu +3 more
doaj +1 more source
Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy [PDF]
Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate.
Balakrishnan +28 more
core +1 more source
А COMPARISON OF THE DIFFERENT GAAS PHEMT LOGIC FAMILIES CHARACTERISTICS
В данной статье представлено сравнение основных характеристик базовых логических вентилей, спроектированных по GaAs pHEMT технологии. Сравнение проведено для шести типов логических схем. Сравнение показало, что использование резисторов с высоким удельным сопротивлением позволяет уменьшить площадь в 1,6 раза и потребляемую мощность в 5 раз для базового ...
D. V. Bilevich +4 more
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The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source
Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
doaj +1 more source

