Results 61 to 70 of about 122,511 (209)

A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection

Electronics Letters, Volume 61, Issue 1, January/December 2025.
The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley   +1 more source

Ka-band GaAs pHEMT Wideband Power Amplifier MMICs

Известия высших учебных заведений России: Радиоэлектроника
Introduction. Ka-band power amplifier MMICs are essential components of many electronic systems. Their application area covers radar, 5G communication, and test equipment.
Alexander S. Efimov, Artem M. Emelianov, Evgeniya A. Krivonogova, Sergey D. Zinkin, Alexander V. Grusha   +4 more
doaj   +1 more source

A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System

Electronics Letters, Volume 61, Issue 1, January/December 2025.
A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley   +1 more source

Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts [PDF]

, 2012
The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications.
E. V. Erofeev, E. V. Anichenko, V. S. Arykov, V. A. Kagadei   +3 more
core   +1 more source

Koplanarer 1-Watt Ka-Band Leistungsverstärker mit 0,15 µm GaAs PHEMTs

, 2022
S.227-230Two compact coplanar MMIC amplifiers having high output power at Ka-band are presented. Based on our 0.15-æm GaAs PHEMT process on 4 wafers, a two-stage MMIC driver amplifier has demonstrated at 35 GHz, a linear gain of 11 dB, an output power at
Bessemoulin, A., Hülsmann, A., Schlechtweg, M., Massler, Hermann   +3 more
core   +1 more source

Active quasi circulator: Comprehensive review and performance comparison

Engineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan, Sujan Chowdhury, Hasan U. Zaman   +2 more
wiley   +1 more source

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

Известия высших учебных заведений России: Радиоэлектроника, 2018
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova, George E. Yakovlev, Vasily I. Zubkov   +2 more
doaj   +1 more source

A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier [PDF]

, 1996
In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode configu­ration is demonstrated by the successful design and realisation of a number of coplanar amplifiers.
Van Hove, M., Schreurs, D., Van Rossum, M., Van der Zanden, K., De Raedt, W., Nauwelaers, B., Baeyens, Y.   +6 more
core   +1 more source

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

IEEE Access, 2022
This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao, Heng-Shou Hsu, Joachim Wurfl, Heng-Tung Hsu   +3 more
doaj   +1 more source

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Electronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu, Shangjing Xi, Hairui Liu, Shichang Chen   +3 more
wiley   +1 more source