Results 51 to 60 of about 122,511 (209)
An X/Ku Dual-Band Switch-Free Reconfigurable GaAs LNA MMIC Based on Coupled Line
IEEE Access, 2020 This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier (LNA) realized by inter-stage and output-stage coupled lines.
Chunshuang Xie, Zhongjun Yu, Cheng Tan
doaj +1 more source
Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
wiley +1 more source
Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
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Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source
Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT
, 2000 A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate + potassium citrate) and H2O2. has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications.
Lee, JL +9 more
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Etude des performances d’un transistor Pseudomorphique à base de AlGaAs/InGaAs/GaAs (PHEMT) [PDF]
, 2014 L’objectif de ce travail est de concevoir et étudier les performances de transistor PHEMT AlGaAs/InGaAs/GaAs. Cette étude est menée à l’aide de simulateur SILVACO, et nous avons obtient des bonnes résultats, il serait souhaitable d’approfondir encore ...
Sebbati, Naima
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Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
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Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
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IEEE Access, 2020 A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components.
Hao-Ran Zhu +3 more
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A new method to evaluate reliability in GaAs PHEMT's
Acta Physica Sinica, 2003 This paper analyzes the degradation in GaAs pseudomorphic high electron mobitity transistors (PHEMT's) by measuring the electric characteristics in GaAs PHEMT's before and after stress. The relation between impact ionization rate and maximu m channel electric field is gained.
null Liu Hong-Xia +4 more
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