RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements [PDF]
, 2003 This paper introduces a new technique that allows us to measure the admittance conversion matrix of a two-port device,using a Nonlinear Vector Network Analyzer.This method is applied to extract the conversion matrix of a 0.2 µµµµm pHEMT,driven by a 4.8 ...
Cidronali, A. +8 more
core +1 more source
Stability of grid amplifiers [PDF]
, 1998 We present a stability model for quasi-optical grid amplifiers. This model is useful for predicting and suppressing the common-mode oscillations that often occur in amplifier grids. Three stabilization techniques will be discussed.
De Lisio, Michael P. +3 more
core +2 more sources
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj +1 more source
A novel topology for a HEMT negative current mirror [PDF]
, 2000 A new solution for the implementation of a HEMT negative current source is presented. The topology can be also profitably employed as a current mirror and as an active load in high-gain MMICs voltage amplifiers.
Centurelli, F. +4 more
core +1 more source
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor [PDF]
, 2014 The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS).
Choi, Kyoung Jin, Lee, JL, Yoo, HM
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K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
doaj +1 more source
50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]
, 2006 Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K. +5 more
core +1 more source
Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects [PDF]
, 2005 Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect ...
Filicori, Fabio +7 more
core +1 more source