Results 51 to 60 of about 219 (168)
Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
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Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
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A new method to evaluate reliability in GaAs PHEMT's
Acta Physica Sinica, 2003 This paper analyzes the degradation in GaAs pseudomorphic high electron mobitity transistors (PHEMT's) by measuring the electric characteristics in GaAs PHEMT's before and after stress. The relation between impact ionization rate and maximu m channel electric field is gained.
null Liu Hong-Xia +4 more
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Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
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Electrical degradation mechanisms of RF power GaAs PHEMTs [PDF]
IEEE International Electron Devices Meeting 2003, 2004 In this research, we have carried out a systematic investigation of the electrical degradation of RF power PHEMTs. By examining devices with different geometries as well as a variety of test structures, our research confirms previous observations of degradation under the gate of the device.
A.A. Villanueva +3 more
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A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications
IEEE Access, 2022 This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao +3 more
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A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source
The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
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