A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications
This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao +3 more
doaj +1 more source
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
doaj +1 more source
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications [PDF]
The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K. +4 more
core +1 more source
Parasitic capacitances in high frequency have a significant role in examining the inductor‐capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka‐band satellite receiver oscillator, which considers these parasitic elements, in order to maintain a specific precise frequency where there is no need ...
Seyed Hossein Alavi Lavasani, Ali Medi
wiley +1 more source
Effect of impact ionization in scaled pHEMTs [PDF]
The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions.
Asenov, A. +3 more
core
Multifunction MMIC For Miniaturized Solid State Switch Matrix [PDF]
This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature ...
Cavanna, T. +3 more
core +1 more source
Active quasi circulator: Comprehensive review and performance comparison
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source

