Results 71 to 80 of about 223 (167)

Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs

Acta Physica Sinica, 2003
In this paper, two-dimensional devices simulation program-MEDICI has been used to simulate AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). Doping and electron concentrations, current flow and gate characteristic in PHEMTs are studied.
null Liu Hong-Xia, null Hao Yue, null Zhang Tao, null Zheng Xue-Feng, null Ma Xiao-Hua   +4 more
openaire   +1 more source

Local self-heating in short gate GaAs PHEMTs

, 1996
Self heating in ultrashort gate length GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) is investigated. The experimental results include an original measurement of the average temperature in the gate drain area of the device channel. An original model which accounts for both bidimensional heat transfer and quasi bidimensional energy ...
Aniel, F., Lepaul, S., Peymayeche, L., De Lustrac, A., Bouillault, F., Adde, R.   +5 more
openaire   +2 more sources

Design Methodology of an Inductorless GaAs pHEMT SPDT Switch With Compact Size for Sub-6 GHz Applications

IEEE Access
This paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodology focuses on optimizing the trade ...
Jaehyun Kwon, Jaeyong Lee, Jinho Yoo, Changkun Park   +3 more
doaj   +1 more source

A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]

Micromachines (Basel), 2023
He D, Yu Z, Chen J, Du K, Zhu Z, Cheng P, Tan C.   +6 more
europepmc   +1 more source

Design of an X-band high efficiency continuous-mode power amplifier

Dianzi Jishu Yingyong
To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao, Yu Zhongjun, Fan Jingxin, Zhang Desheng   +3 more
doaj   +1 more source

A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT

IEEE Access
This paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen, Li Gao, Xiu Yin Zhang, Yanjie Wang   +3 more
doaj   +1 more source

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]

Sci Rep, 2022
Zhao J, Chen Q, Chen C, Chen Z, Liu Z, Zhao G.   +5 more
europepmc   +1 more source

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications. [PDF]

Sensors (Basel), 2023
Galante-Sempere D, Khemchandani SL, Del Pino J.   +2 more
europepmc   +1 more source

Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System. [PDF]

Sensors (Basel), 2022
Chen X, Hu A, Gong J, Altaf A, Miao J.
europepmc   +1 more source

An optimization design scheme applied to multi-modules cascading of transceiver IC

Dianzi Jishu Yingyong
In this paper, a novel optimization design scheme is proposed to solve the cascading mismatch problem of sub-circuits in beamforming chips due to parasitic effects.
Yu Qiushi, Guo Runnan, Chen Hao, Zhuang Yuan, Liang Yun, Yan Yujun, Wu Xia, Ge Fengchun, Wang Weibo, Tao Hongqi   +9 more
doaj   +1 more source