Results 71 to 80 of about 122,511 (209)
Study of DX centers in AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. A major challenge in AlGaAs-based heterostructure devices is the presence of DX centers in heavily doped n-type layers. These deep donor traps degrade the performance of pseudomorphic high electron mobility transistors (pHEMTs).
A. V. Sapozhnikov +4 more
doaj +1 more source
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
IEEE Access, 2023 This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
doaj +1 more source
A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers
Electronics Letters, Volume 60, Issue 6, March 2024.This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano +6 more
wiley +1 more source
The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj +1 more source
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
, 2018 We performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such ...
M.S. Mironova +3 more
core +1 more source
A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications [PDF]
, 1999 A high efficiency 2.4-V operation dual delta doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for personal communications has been developed.
Lee, Di-Houng +3 more
core +1 more source
Novel drain-less multi-gate pHEMT for electrostatic discharge (ESD) protection in GaAs technology
, 2013 Electrostatic discharge (ESD) protection structures in GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp.
Qiang Cui +3 more
core +1 more source
High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication
Journal of Electronic Science and TechnologyIn the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid +4 more
doaj +1 more source
Design of Medium Power Amplifier Using GaAs PHEMT Technology for Wireless Applications
, 2012 This paper presents the design of single-stage and two-stage medium power amplifiers (MPAs) using GaAs PHEMT technology for the wireless applications. The single-stage MPA was designed using 0.15 µm GaAs PHEMT technology to be operated at 3.5 GHz whereas
Amiza Rasmi
core +1 more source