Results 41 to 50 of about 223 (167)
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
doaj +1 more source
Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator
IEICE Transactions on Electronics, 2013 exaly +2 more sources
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj +1 more source
An X/Ku Dual-Band Switch-Free Reconfigurable GaAs LNA MMIC Based on Coupled Line
IEEE Access, 2020 This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier (LNA) realized by inter-stage and output-stage coupled lines.
Chunshuang Xie, Zhongjun Yu, Cheng Tan
doaj +1 more source
Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
wiley +1 more source
Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
doaj +1 more source
AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors
Technical Physics Letters, 2022 The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100
null Pashkovsky A. B. +5 more
openaire +1 more source
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source