Results 41 to 50 of about 2,410 (220)

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]

, 2001
The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E., Rudge, P.J., Snowden, C.M., Steer, M.B.   +3 more
core   +1 more source

Electrical degradation mechanisms of RF power GaAs PHEMTs [PDF]

IEEE International Electron Devices Meeting 2003, 2004
In this research, we have carried out a systematic investigation of the electrical degradation of RF power PHEMTs. By examining devices with different geometries as well as a variety of test structures, our research confirms previous observations of degradation under the gate of the device.
A.A. Villanueva, J.A. del Alamos, T. Hisaka, K. Hayashi   +3 more
openaire   +1 more source

Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier [PDF]

, 2001
We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed ...
Beyer, A., De Raedt, W., Nauwelaers, B., Neuhaus, B., Schreurs, D., Vandersmissen, R.   +5 more
core   +1 more source

Design of 35-dB 0.03-to-2.7 GHz Two-Stage Broadband Power Amplifier With 37.2 dBm P_sat Using Modular Technology

IEEE Access, 2021
This paper presents a modular technology for two-stage broadband power amplifier (PA) design. The proposed method focuses on separately realizing two stage’s flat gain characteristics, thus providing the entire circuit’s required flatness ...
Jun Hu, Xiaojuan Chen, Zhi Jin, Hongtao Xu   +3 more
doaj   +1 more source

W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth [PDF]

, 2002
Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process.
Chu, Tah-Hsiung, Hwang, Yuh-Jing, Wang, Huei   +2 more
core   +1 more source

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Technical Physics Letters, 2022
The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100
null Pashkovsky A. B., null Yushchenko A. Y., null Ayzenshtat G. I., null Zhuravlev K. S., null Dmitriev D. V., null Protasov D. Yu.   +5 more
openaire   +1 more source

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

Dianzi Jishu Yingyong, 2018
This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj   +1 more source

Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]

, 1998
The impact of In_xAl_1-xAs strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A., Babiker, S., Barker, J.R., Beaumont, S.P., Roy, S.   +4 more
core   +1 more source

Performance Improvement of Microwave Vector Modulator Through Coupler Characteristic Impedance Optimization and Bond-Wire Inductance Utilization

IEEE Access, 2019
An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen, Umar Dilshad, Ghulam Mehdi, Chao Wang, Anyong Hu, Jungang Miao   +5 more
doaj   +1 more source

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

Applied Sciences, 2022
This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process.
Ruihao Yin, Zhihao Zhang, Haochen Xiong, Gary Zhang   +3 more
doaj   +1 more source