Results 41 to 50 of about 219 (168)
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
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Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
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K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
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An X/Ku Dual-Band Switch-Free Reconfigurable GaAs LNA MMIC Based on Coupled Line
IEEE Access, 2020 This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier (LNA) realized by inter-stage and output-stage coupled lines.
Chunshuang Xie, Zhongjun Yu, Cheng Tan
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Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
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IEEE Access, 2020 A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components.
Hao-Ran Zhu +3 more
doaj +1 more source
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
IEEE Access, 2023 This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
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Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
wiley +1 more source