Results 41 to 50 of about 122,511 (209)

Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation

, 2020
The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition ...
Gudkov A.G., Yankevich V.B., Popov M.K., Chizhikov S.V., Tikhomirov V.G., Agasieva S.V., A G Gudkov, S V Agasieva, V B Yankevich, M K Popov, S V Chizhikov, V G Tikhomirov   +11 more
core   +1 more source

Development of a New pHEMT-Based Electrostatic Discharge Protection Structure

, 2011
Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices.
Juin J. Liou, Hsien-Chin Chiu, Qiang Cui, Cui, Qiang, Chia-Shih Cheng, Liou, Juin J., Cheng, Chia Shih, Chiu, Hsien Chin   +7 more
core   +2 more sources

Device Considerations and Characterisations of Double-Channel GaAs pHEMT Schottky Diodes for Limiter Applications

, 2015
Device Considerations and Characterisations of Double-Channel GaAs pHEMT Schottky Diodes for Limiter ...
Mohammad A. Alim, Norshakila Haris, Haris, Norshakila, Kyabaggu, Peter, Yongjian Zhang, Alim, Mohammad Abdul, Zhang, Yongjian, Ali A. Rezazadeh, Rezazadeh, Ali, Peter B. K. Kyabaggu   +9 more
core   +1 more source

Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

AIP Advances, 2018
Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng, Chu-Chun Wu, Yen-Ting Fan, Jenq-Shinn Wu, Sheng-Di Lin   +4 more
doaj   +1 more source

UWB-MMIC Matrix Distributed Low Noise Amplifier

Proceedings, 2020
In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali, Said Elkhaldi, Intissar Hamzi, Abdelhafid Marroun, Naima Amar Touhami   +4 more
doaj   +1 more source

A 12 GHz low noise amplifier with high-gain

Dianzi Jishu Yingyong, 2022
A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj   +1 more source

Снижение коэффициента шума pHEMT транзистора на подложке GaAsза счет оптимизации толщины подзатворного барьерного слояс использованием методов численного моделирования

Конденсированные среды и межфазные границы
Цель статьи: Целью настоящей работы является снижение коэффициента шума pHEMT транзистора на подложке GaAs за счет оптимизации толщины барьерного слоя гетероструктуры транзистора и исследование применимости в данных целях методов численного моделирования.
Елена Игоревна Василькова, Ксения Юрьевна Шубина, Денис Сергеевич Папылев, Владислав Васильевич Андрюшкин, Евгений Викторович Пирогов, Андрей Геннадьевич Гладышев, Иннокентий Игоревич Новиков, Леонид Яковлевич Карачинский, Максим Сергеевич Соболев   +8 more
doaj   +1 more source

Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW Technology

, 2015
Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW ...
Mohammad A. Alim, Sinulingga, Emerson, Norshakila Haris, Haris, Norshakila, Emerson Sinulingga, Kyabaggu, Peter, Yongjian Zhang, Alim, Mohammad Abdul, Zhang, Yongjian, Ali A. Rezazadeh, Rezazadeh, Ali, Peter B. K. Kyabaggu   +11 more
core   +1 more source

Novel electrostatic discharge (ESD) protection solution in GaAs pHEMT technology

, 2012
This paper develops an effective electrostatic discharge (ESD) protection solution for GaAs-based integrated circuits based on a novel multi-gate pHEMT.
Juin J. Liou, Qiang Cui, Cui, Qiang, Liou, Juin J.   +3 more
core   +1 more source

Analysis of an Impedance‐Adaptive W‐Band GaN MMIC Power Amplifier

IET Microwaves, Antennas &Propagation, Volume 20, Issue 1, January/December 2026.
This paper presents a W‐band GaN MMIC power amplifier with an integrated reconfigurable matching network implemented in a 40‐nm GaN‐on‐SiC process. The three‐stage PA achieves 18.1 dB gain and 25.3 dBm output power at 77 GHz, demonstrating the feasibility of embedding reconfigurable elements in millimetre‐wave PAs.
Stefan Stroessner, Laila Marzall, Andrea Arias‐Purdue, Scott Schafer, Zoya Popović   +4 more
wiley   +1 more source