Results 21 to 30 of about 219 (168)

An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]

ITM Web of Conferences, 2019
A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem, Bilevich Dmitry, Salnikov Andrei, Dobush Igor, Goryainov Aleksandr, Kalentyev Alexey   +5 more
doaj   +1 more source

A Proposal for a Low‐Frequency Axion Search in the 1–2 μ$\umu$ eV Range and Below with the BabyIAXO Magnet

Annalen der Physik, Volume 535, Issue 12, December 2023., 2023
This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune, Alejandro Álvarez Melcón, Sergio Arguedas Cuendis, Sergio Calatroni, Cristian Cogollos, Jack Devlin, Alejandro Díaz‐Morcillo, David Díez‐Ibáñez, Babette Döbrich, Javier Galindo, Juan Daniel Gallego, Jose María García‐Barceló, Benito Gimeno, Jessica Golm, Yikun Gu, Louis Herwig, Igor Garcia Irastorza, Antonio Jose Lozano‐Guerrero, Chloé Malbrunot, Jordi Miralda‐Escudé, Juan Monzó‐Cabrera, Pablo Navarro, Jose Ramón Navarro‐Madrid, Javier Redondo, José Reina‐Valero, Kristof Schmieden, Tim Schneemann, Marc Siodlaczek, Stefan Ulmer, Walter Wuensch   +29 more
wiley   +1 more source

А COMPARISON OF THE DIFFERENT GAAS PHEMT LOGIC FAMILIES CHARACTERISTICS

Dynamics of Systems, Mechanisms and Machines, 2021
В данной статье представлено сравнение основных характеристик базовых логических вентилей, спроектированных по GaAs pHEMT технологии. Сравнение проведено для шести типов логических схем. Сравнение показало, что использование резисторов с высоким удельным сопротивлением позволяет уменьшить площадь в 1,6 раза и потребляемую мощность в 5 раз для базового ...
D. V. Bilevich, A. S. Salnikov, A. A. Popov, A. A. Kalentyev, A. E. Goryainov   +4 more
openaire   +1 more source

MXene Free Standing Films: Unlocking the Impact of Flake Sizes in Microwave Resonant Structures in Humid Environments

Small, Volume 19, Issue 37, September 13, 2023., 2023
This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan, Brian C. Wyatt, Kasra Khorsand Kazemi, Babak Anasori, Mohammad H. Zarifi   +4 more
wiley   +1 more source

On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)

Electronics Letters, Volume 59, Issue 10, May 2023., 2023
MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley   +1 more source

The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

IEEE Access, 2021
This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction
Abdouraouf Said Youssouf, Mohamed Hadi Habaebi, Nurul Fadzlin Hasbullah   +2 more
doaj   +1 more source

High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications

ASM Science Journal, 2022
We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY, maryam abata, mohammed Fattah, said Mazer, Mahmoud Mehdi, Moulhime El Bekkali, Cathrine Algani   +6 more
doaj   +1 more source

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Electronics Letters, Volume 59, Issue 10, May 2023., 2023
This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Jun Suda   +4 more
wiley   +1 more source

Analysis and design of a 10–20 GHz simultaneous noise and input matching low‐noise amplifier via frequency‐dependent negative feedbacks

Electronics Letters, Volume 59, Issue 3, February 2023., 2023
This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He, Yang Yuan, Jiaxuan Li, Cheng Tan, Zhongjun Yu   +4 more
wiley   +1 more source

The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]

ITM Web of Conferences, 2019
The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis, Kuznetsov Alexander, Usachev Nikolay, Elesin Vadim, Selishchev Ilya   +4 more
doaj   +1 more source