Results 21 to 30 of about 2,410 (220)
An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]
A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem +5 more
doaj +1 more source
This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune +29 more
wiley +1 more source
This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan +4 more
wiley +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley +1 more source
This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando +4 more
wiley +1 more source
This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction
Abdouraouf Said Youssouf +2 more
doaj +1 more source
High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He +4 more
wiley +1 more source
An X/Ku band phase shifter with filter compensation technology
This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
wiley +1 more source
Millimeter-wave FET modeling based on a frequency extrapolation approach [PDF]
An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range.
Cidronali, A. +4 more
core +1 more source

