Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin +3 more
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Failure Mechanism of pHEMT in Navigation LNA under UWB EMP [PDF]
Micromachines, 2022 With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments.
Yonglong Li +5 more
doaj +2 more sources
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process [PDF]
Sensors, 2022 This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential ...
Ranran Zhao +3 more
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A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT [PDF]
Micromachines, 2023 To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility ...
Jiaxuan Li +5 more
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An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
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W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
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The Design of a 1–6 GHz Broadband Double-Balanced Mixer [PDF]
Micromachines, 2023 This brief proposes a 1–6 GHz broadband double-balanced mixer. On the basis of the standard Marchand balun mixer, two techniques to enhance the performance of the mixer are proposed.
Yujun Wang +4 more
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Mechanisms of Degradation and Damage in GaAs PHEMT Low-Noise Amplifier Under Ultra-Short Microwave Pulses [PDF]
MicromachinesUltra-short microwave pulses with durations of 1 ns or less can go through a PIN limiter with low attenuation before the limiter responds and can therefore be directly injected into the subsequent low-noise amplifier (LNA).
Tongxin Guan +5 more
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Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]
MicromachinesIn this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan +3 more
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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques [PDF]
MicromachinesThis paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning
Boyang Shan, Haipeng Fu, Jian Wang
doaj +2 more sources