Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin, Haifeng Wu, Lining Jia
exaly +6 more sources
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process [PDF]
Sensors, 2022 This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential ...
Yuming Zhang, Hongliang Lu
exaly +4 more sources
Failure Mechanism of pHEMT in Navigation LNA under UWB EMP [PDF]
Micromachines, 2022 With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments.
Yonglong Li +5 more
doaj +2 more sources
A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT [PDF]
Micromachines, 2023 To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility ...
Jiaxuan Li +5 more
doaj +2 more sources
An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
doaj +2 more sources
W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
The Design of a 1–6 GHz Broadband Double-Balanced Mixer [PDF]
Micromachines, 2023 This brief proposes a 1–6 GHz broadband double-balanced mixer. On the basis of the standard Marchand balun mixer, two techniques to enhance the performance of the mixer are proposed.
Yujun Wang +4 more
doaj +2 more sources
Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line [PDF]
Micromachines, 2023 Compactness has obtained sufficient importance in wideband phase shifter design considerations, as it is directly related to fabrication cost. In this paper, a novel structure was presented to create compact broadband 180-degree phase shifter, which has ...
Ding He +4 more
doaj +2 more sources
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +2 more sources
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]
MicromachinesIn this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan +3 more
doaj +2 more sources