A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology
Electronics Letters, Volume 58, Issue 8, Page 303-305, April 2022., 2022 Abstract A concurrent 5.5/12.5‐GHz dual‐band power amplifier (PA) is designed and implemented in a 0.25 μm GaAs pseudomorphic high electron mobility transistor process. The PA is composed of two stages and adopts LC parallel and series networks for dual‐band matching.
Chunshuang Xie +5 more
wiley +1 more source
GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
doaj +1 more source
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source
Tunnelling and impact ionization in scaled double doped PHEMTs [PDF]
, 2002 No abstract ...
Asenov, A., Kalna, K.
core +1 more source
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]
, 2009 A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E. +4 more
core +3 more sources
Wideband IMD3 suppression through negative baseband impedance synthesis
IET Microwaves, Antennas &Propagation, Volume 15, Issue 7, Page 728-743, 10 June 2021., 2021 Abstract This article presents a power amplifier (PA) linearisation approach based on synthesising a negative impedance termination at the baseband frequency. Negative baseband termination has been previously shown to suppress intermodulation distortion (IMD) products in power amplifiers.
William Sear, Taylor W. Barton
wiley +1 more source
High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology [PDF]
Journal of Electromagnetic Engineering and Science, 2023 In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However,
Taejoo Sim +6 more
doaj +1 more source
Modeling and performance of a 100-element pHEMT grid amplifier [PDF]
, 1996 A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips.
De Lisio, Michael P. +6 more
core +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125°C [PDF]
, 2009 The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures.
Akram, R., Dede, M., Oral, Ahmet
core +2 more sources