Results 31 to 40 of about 219 (168)
An X/Ku band phase shifter with filter compensation technology
Electronics Letters, Volume 59, Issue 2, January 2023., 2023 This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
wiley +1 more source
GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
doaj +1 more source
A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology
Electronics Letters, Volume 58, Issue 8, Page 303-305, April 2022., 2022 Abstract A concurrent 5.5/12.5‐GHz dual‐band power amplifier (PA) is designed and implemented in a 0.25 μm GaAs pseudomorphic high electron mobility transistor process. The PA is composed of two stages and adopts LC parallel and series networks for dual‐band matching.
Chunshuang Xie +5 more
wiley +1 more source
High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology [PDF]
Journal of Electromagnetic Engineering and Science, 2023 In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However,
Taejoo Sim +6 more
doaj +1 more source
Wideband IMD3 suppression through negative baseband impedance synthesis
IET Microwaves, Antennas &Propagation, Volume 15, Issue 7, Page 728-743, 10 June 2021., 2021 Abstract This article presents a power amplifier (PA) linearisation approach based on synthesising a negative impedance termination at the baseband frequency. Negative baseband termination has been previously shown to suppress intermodulation distortion (IMD) products in power amplifiers.
William Sear, Taylor W. Barton
wiley +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
IEEE Access, 2021 This paper presents a modular technology for two-stage broadband power amplifier (PA) design. The proposed method focuses on separately realizing two stage’s flat gain characteristics, thus providing the entire circuit’s required flatness ...
Jun Hu +3 more
doaj +1 more source
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj +1 more source
IEEE Access, 2019 An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen +5 more
doaj +1 more source
A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications
Applied Sciences, 2022 This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process.
Ruihao Yin +3 more
doaj +1 more source