Results 11 to 20 of about 122,511 (209)
Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
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Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
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An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]
ITM Web of Conferences, 2019 A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem +5 more
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Electronics Letters, 2023 To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
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GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS [PDF]
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
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Original Topology of GaAs-PHEMT Mixer [PDF]
2000 30th European Microwave Conference, 2000 An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
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Thermal Memory Effects on the Linearity of a GaAs PHEMT [PDF]
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
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Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
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Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
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Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
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