Electronics Letters, 2023 To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
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Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
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Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
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Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]
MicromachinesIn this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan +3 more
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A Wideband D-Band Frequency Sextupler Chain with High Harmonic Rejection in 100 nm GaAs pHEMT Technology [PDF]
MicromachinesThis paper presents a wideband D-band frequency sextupler chain implemented in a 100 nm GaAs pHEMT process. The proposed circuit comprises an input-stage frequency tripler, an inter-stage harmonic-rejection power amplifier, and an output-stage frequency ...
Pinqing Wang +4 more
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W-Band Low-Noise Amplifier with Improved Stability Using Dual RC Traps in Bias Networks on a 0.1 μm GaAs pHEMT Process [PDF]
MicromachinesThis paper demonstrates that potential oscillations in various frequency bands of monolithic microwave integrated circuits (MMICs) can be effectively suppressed using well-designed dual RC traps in the bias networks.
Seong-Hee Han, Dong-Wook Kim
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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques [PDF]
MicromachinesThis paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning
Boyang Shan, Haipeng Fu, Jian Wang
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Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
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Original Topology of GaAs-PHEMT Mixer [PDF]
2000 30th European Microwave Conference, 2000 An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
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Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
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