Results 111 to 120 of about 2,410 (220)
GaAs pHEMT class-E power amplifier design
, 2021 Yüksek güçlü RF kuvvetlendiciler mikrodalga sistemlerde genelde verici katında antenden önce yer alır. Bu tür kuvvetlendiricilerin tasarımlarında yüksek frekans elektroniğinin tasarım ilkelerine ek doğrusal olmayan tasarım tekniklerinin de kullanılmak zorundadır.Bir RF güç kuvvetlendiricisi aktif elemana ek olarak giriş ve çıkış katından oluşur.
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Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
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A general neuro-space mapping technique for microwave device modeling
EURASIP Journal on Wireless Communications and Networking, 2018 Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general neuro-space mapping (Neuro-SM) method is proposed to fulfill the needs of the increased modeling complexity ...
Lin Zhu +6 more
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The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects [PDF]
, 2011 2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology.
del Alamo, Jesus A.
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Terahertz responsivity of field-effect transistors under arbitrary biasing conditions [PDF]
, 2013 Current biased photoresponse model of long channel field-effect transistor (FET) detectors is introduced to describe the low frequency behavior in complex circuit environment.
Földesy, Péter
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Design of an X-band high efficiency continuous-mode power amplifier
Dianzi Jishu YingyongTo improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao +3 more
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Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices [PDF]
, 2013 With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue.
Coutu, Ronald A., Jr., Ostrow, Scott A.
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IEEE AccessThis paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodology focuses on optimizing the trade ...
Jaehyun Kwon +3 more
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A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT
IEEE AccessThis paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen +3 more
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Восстановление нелинейной модели GaAs pHEMT СВЧ-транзистора
Доклады Томского государственного университета систем управления и радиоэлектроники, 2010 Представлены результаты восстановления нелинейной модели ПТШ с шириной затвора 600 мкм, выполненного по GaAs pHEMT-технологии ЗАО «НПФ Микран». Восстановление проводилось на основе результатов измерений малосигнальных параметров рассеяния и вольт-амперных характеристик, выполненных в непрерывном режиме.
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