Results 111 to 120 of about 219 (168)

Modeling of GaAs pHEMT parameters in Silvaco TCAD

Proceedings of Tomsk State University of Control Systems and Radioelectronics, 2016
openaire   +1 more source

Broadband multi-beam lens-assisted mmID enabling multi-gigabit backscatter data rates for next-generation wireless networks. [PDF]

Nat Commun
Joshi M, Lynch Iii CA, Hu K, Mensah YA, Cressler JD, Tentzeris MM.   +5 more
europepmc   +1 more source

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Differential BroadBand (1-16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing. [PDF]

Sensors (Basel)
Jimenez-Martin JL, Gonzalez-Posadas V, Parra-Cerrada A, Espinosa-Adams D, Segovia-Vargas D, Hernandez W.   +5 more
europepmc   +1 more source

Temperature Characteristics Modeling for GaN PA Based on PSO-ELM. [PDF]

Micromachines (Basel)
Lin Q, Wang M.
europepmc   +1 more source

Advanced Dielectric Resonator Antenna Technology for 5G and 6G Applications. [PDF]

Sensors (Basel)
Zhang Y, Ogurtsov S, Vasilev V, Kishk AA, Caratelli D.   +4 more
europepmc   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]

Sensors (Basel)
Delwar TS, Aras U, Siddique A, Lee Y, Ryu JY.   +4 more
europepmc   +1 more source

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Burnout properties of microwave pulse injected on GaAs PHEMT

Microelectronics Reliability, 2015
Abstract The burnout properties of microwave pulse injected on the low noise amplifier (LNA) based on a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) are experimentally investigated by means of a microwave pulse injection at 1.5 GHz, 45 ns.
Cunbo Zhang, Jian-de Zhang, Honggang Wang 0003, Guangxing Du   +3 more
exaly   +2 more sources