Results 111 to 120 of about 122,511 (209)

Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes. [PDF]

Sensors (Basel), 2023
Walsh C, Muttlak SG, Sadeghi M, Missous M.   +3 more
europepmc   +1 more source

Large-signal reliability of pHEMT power amplifier

, 2017
Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated.
Guo , Zhe-Zhi
core  

Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics. [PDF]

Sensors (Basel), 2022
Tamošiūnas V, Minkevičius L, Bučius I, Jokubauskis D, Redeckas K, Valušis G.   +5 more
europepmc   +1 more source

Very high power low-cost field-plate GaAs PHEMTs for X-band applications

, 2006
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented by also focusing on the device performances evaluated by means of experimental ...
Angelini, A, Serino, A., S. LAVANGA, Peroni, M, Lavanga, S., CHINI, Alessandro, Lavanga, S, A. ANGELINI, Chini, A, E. LIMITI, Angelini, A., A. SERINO, Limiti, E., Limiti, E, C. LANZIERI, SERINO, ANTONIO, A. CHINI, Camarchia, V., Lanzieri, C., Verzellesi, G, LIMITI, ERNESTO, Camarchia, Vittorio, Serino, A, Verzellesi, G., Peroni, M., Chini, A., Cappelluti, Federica, M. PERONI, Cappelluti, F., Ghione, G., Cappelluti, F, Camarchia, V, Lanzieri, C, Ghione, Giovanni, Ghione, G, VERZELLESI, Giovanni, G. VERZELLESI   +36 more
core  

Editorial for the Special Issue on Broadband Terahertz Devices and Communication Technologies. [PDF]

Micromachines (Basel), 2023
Zhang L, Pang X, Pitchappa P.
europepmc   +1 more source

A Ka-Band Integrated Six-Port Chip for Analog Complex Correlator. [PDF]

Sensors (Basel), 2022
He W, Chen X, Gong J, Hu A, Miao J.
europepmc   +1 more source

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures. [PDF]

Materials (Basel), 2023
Klochkov AN, Yskakov A, Vinichenko AN, Safonov DA, Kargin NI, Bulavin MV, Galushko AV, Yamurzin VR, Vasil'evskii IS.   +8 more
europepmc   +1 more source

Influence of light on TECs GaAs

, 2000
Se presenta un análisis teórico y experimental de la influencia de la luz en los transistores de efecto de campo GaAs de microondas PHEMT. El objetivo es estudiar la posibilidad y relevancia de la aplicación de técnicas de iluminación óptica en tales ...
David Alejandro Zevallos Castro
core  

GaAs pHEMT switches for wireless

III-Vs Review, 2001
openaire   +1 more source

Fabrication and Characterization of In_0.53Ga_0.47As/InAs/In_0.53Ga_0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate. [PDF]

Micromachines (Basel), 2022
Shin SH, Shim JP, Jang H, Jang JH.
europepmc   +1 more source