Results 141 to 150 of about 219 (168)
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Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs
28th European Microwave Conference, 1998, 1998The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results.
W. Marsetz +6 more
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Accurate Small-Signal Model Extraction for pHEMT on GaAs
International Journal of Infrared and Millimeter Waves, 2007An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by
Lei Wang, Rui-Min Xu, Bo Yan
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Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs
IEEE Electron Device Letters, 2004The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-/spl mu/m GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically identified using scanning transmission electron microscopy. Further energy dispersive analysis with X-ray (EDX) analysis confirms the Ti diffusion into the AlGaAs Schottky barrier layer and the ...
Y.C. Chou +9 more
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A 5.25GHz GaAs PHEMT power amplifier for 802.11a application
2010 International Conference on Microwave and Millimeter Wave Technology, 2010A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P 1dB ), small signal gain of 25 ...
Yanjun Peng +5 more
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Oxidation control of GaAs pHEMTs for high efficiency applications
IEEE Electron Device Letters, 2002In this letter, for the first time, an investigation of partially oxidized GaAs-on-insulator (GOI) AlGaAs/InGaAs/GaAs pseudomorphic HEMTs is reported. Fully oxidized pHEMTs demonstrated minimized substrate leakage current and high output impedance, but suffered from 30/spl sim/40% charge loss. Fully oxidized devices also showed transconductance peaking
null Can Zheng +4 more
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Reliability of GaAs PHEMT under hydrogen containing atmosphere
Proceedings of 1994 IEEE GaAs IC Symposium, 2005Degradation of PHEMTs by hydrogen was verified by DC life tests in the hermetic packages and in the forming gases containing different hydrogen concentrations. We have found that a hydrogen partial pressure in the order of 2 torr will cause Ids change by 20% in about 800 hours at 125/spl deg/C and about 300 hours at 150/spl deg/C.
W.W. Hu +4 more
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A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application
International Journal of Circuit Theory and ApplicationsABSTRACTCompared to silicon‐based complementary metal oxide semiconductor (CMOS), second‐generation semiconductor materials, such as gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), offer significant advantages for radio frequency (RF) applications.
Tingwei Gong +6 more
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Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
Electronics (Switzerland), 2021Igor M Dobush +2 more
exaly
A compact model for dual-gate GaAs PHEMT and application for power amplifier design
IEICE Electronics Express, 2021Zhiwei Xu, Chunyi Song
exaly
0.18 μm GaAs-pHEMT MMIC Frequency Doubler for Radar Area Scanning Application
Lecture Notes in Electrical Engineering, 2022Naima Amar Touhami
exaly