Results 141 to 150 of about 223 (167)
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Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), 1998A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT ...
H.J. Siweris +9 more
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A 1.4 watt Q-band GaAs PHEMT MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 2002A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA.
S.J. Nash +3 more
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Oxidation control of GaAs pHEMTs for high efficiency applications
IEEE Electron Device Letters, 2002In this letter, for the first time, an investigation of partially oxidized GaAs-on-insulator (GOI) AlGaAs/InGaAs/GaAs pseudomorphic HEMTs is reported. Fully oxidized pHEMTs demonstrated minimized substrate leakage current and high output impedance, but suffered from 30/spl sim/40% charge loss. Fully oxidized devices also showed transconductance peaking
null Can Zheng +4 more
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Reliability of GaAs PHEMT under hydrogen containing atmosphere
Proceedings of 1994 IEEE GaAs IC Symposium, 2005Degradation of PHEMTs by hydrogen was verified by DC life tests in the hermetic packages and in the forming gases containing different hydrogen concentrations. We have found that a hydrogen partial pressure in the order of 2 torr will cause Ids change by 20% in about 800 hours at 125/spl deg/C and about 300 hours at 150/spl deg/C.
W.W. Hu +4 more
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Off-State Breakdown of GaAs PHEMTs: Review and New Data
IEEE Transactions on Device and Materials Reliability, 2004This paper reviews the literature dealing with off-state gate-drain breakdown in MESFET and HEMT structures, with particular emphasis on GaAs PHEMTs, in terms of: 1) the physics of the breakdown phenomenon; 2) the breakdown walkout effect; 3) the impact of design and process choices on the breakdown behavior; and 4) the experimental techniques used for
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The Effect of Gate Current on the Degradation of GaAs PHEMT MMICs
[Reliability of Compound Semiconductors] ROCS Workshop 2006, 2006Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 ?m GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage.
Y. C. Chou +12 more
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A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application
International Journal of Circuit Theory and ApplicationsABSTRACTCompared to silicon‐based complementary metal oxide semiconductor (CMOS), second‐generation semiconductor materials, such as gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), offer significant advantages for radio frequency (RF) applications.
Tingwei Gong +6 more
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Electrical degradation mechanisms of RF power GaAs PHEMTs.
2007GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete ...
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Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
Electronics (Switzerland), 2021Artem Popov +2 more
exaly