Results 211 to 220 of about 2,410 (220)
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Design of 6–18-GHz High-Power Amplifier in GaAs pHEMT Technology
IEEE Transactions on Microwave Theory and Techniques, 2017Masoud Meghdadi, Ali Medi
exaly
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's
IEEE Transactions on Electron Devices, 1998Mattia Borgarino +2 more
exaly
Burnout properties of microwave pulse injected on GaAs PHEMT
Microelectronics Reliability, 2015exaly
A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology
Journal of the Korean Institute of Electromagnetic Engineering and Science, 2017Junghyun Kim
exaly
Multiline Marchand Baluns Design using GaAs pHEMT Technology
2025 International Conference on Electrical Engineering and Photonics (EExPolytech)Alexander B. Nikitin +3 more
openaire +1 more source
The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers
IEEE Transactions on Microwave Theory and Techniques, 2005exaly
A 7‐ to 14‐GHz GaAs pHEMT LNA with 1.1 dB noise figure and 26 dB gain
Microwave and Optical Technology Letters, 2010exaly
Small Signal Modeling for GaAs pHEMT Based on LSTM
2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT)Qian Lin +3 more
openaire +1 more source
A high gain-flatness C-band variable gain LNA in a 0.25 μm GaAs pHEMT process
Microelectronics Journalexaly

