Results 221 to 230 of about 3,422 (258)

Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), 1998
A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT ...
H.J. Siweris, A. Werthof, H. Tischer, U. Schaper, A. Schafer, L. Verweyen, T. Grave, G. Bock, M. Schlechtweg, W. Kellner   +9 more
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A 1.4 watt Q-band GaAs PHEMT MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 2002
A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA.
S.J. Nash, A. Platzker, R. Wohlert, C. Liss   +3 more
openaire   +1 more source

6 – 10 GHz Cryogenic GaAs pHEMT LNA MMIC

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2020
This paper demonstrates a cryogenic broadband GaAs pHEMT LNA MMIC. The LNA MMIC was designed by using modified GaAs pHEMT model, which includes the thermal characteristics of each device material. The MMIC was fabricated by using a commercial $0.25\mu m$ GaAs pHEMT process.
Hayato Shimizu, Yudai Iwashita, Ryotaro Iwamoto, Tamio Kawaguchi, Kenjiro Nishikawa   +4 more
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Suppression of electrochemical etching effects in GaAs PHEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003
The electrochemical etching effect is investigated in the recess etching of GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs). It is demonstrated that the electrochemical etching due to the exposed ohmic metals seriously effects the etch rate of InGaAs/AlGaAs and furthermore the production uniformity and yield.
Y. Zhao, Y. Tkachenko, D. Bartle
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GaAs pHEMT MMIC of the ultra broadband amplifier

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010
There is an example of ultra broadband amplifier MMIC design based on GaAs pHEMT process. Operating frequency band is 1–4 GHz, gain is 18 dB, noise factor is lesser 2.6 dB, input/output reflection factor is less − 15 dB, unipolar power is + 5 V, consumption current is 50 mA, chip dimension is 2.5 × 1.5 × 0.1 mm.
A. A. Barov, A. V. Kondratenko
openaire   +1 more source

Source-pull noise characterization of GaAs pHEMTs

2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012
The paper presents results of the four noise parameter measurement of GaAs pseudomorflc high electron mobility transistors (pHEMTs) in the frequency range 0.8–8 GHz. The parameters were determined using an own complex noise characterization method based on the eigth-term linear noise model.
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Reliability of GaAs PHEMT under hydrogen containing atmosphere

Proceedings of 1994 IEEE GaAs IC Symposium, 2005
Degradation of PHEMTs by hydrogen was verified by DC life tests in the hermetic packages and in the forming gases containing different hydrogen concentrations. We have found that a hydrogen partial pressure in the order of 2 torr will cause Ids change by 20% in about 800 hours at 125/spl deg/C and about 300 hours at 150/spl deg/C.
W.W. Hu, E.P. Parks, T.H. Yu, P.C. Chao, A.W. Swanson   +4 more
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Flip-Chip Assembled GaAs pHEMT $Ka$-Band Oscillator

IEEE Microwave and Wireless Components Letters, 2007
In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-mum-gate pHEMT. With a characterized 0.15-mum-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated.
Wei-Kuo Huang, Yu-An Liu, Che-Ming Wang, Yue-Ming Hsin, Cheng-Yi Liu, Tsung-Jung Yeh   +5 more
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150 GHz GaAs amplifiers in a commercial 0.1-μm GaAs PHEMT process

2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016
150 GHz amplifiers fabricated on a commercial GaAs process with an f T of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz.
Alex Bessemoulin, Melissa C. Rodriguez, Simon J. Mahon, Anthony E. Parker, Michael C. Heimlich   +4 more
openaire   +1 more source

An Ultra-wideband GaAs pHEMT Distributed Power Amplifier

2019 IEEE 4th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC), 2019
A 0.5–7 GHz power amplifier (PA) is designed and fabricated in a 0.15 μm GaAs pHEMT process in this paper. To achieve a broadband power performance, this PA implements a nonuniform distributed amplifier configuration with four amplifying cells. Meanwhile, the transistor-stacking technology is applied in this PA to enhance the wideband power gain ...
Liu-Lin Hu, Dan-Hui Hu, Hai-Feng Wu, Qian Lin, Yu-Nan Hua, Si-Wei Chen, Xiao-Ming Zhang   +6 more
openaire   +1 more source