Results 231 to 240 of about 3,422 (258)
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Lumped equivalent circuit de-embedding of GaAs structures [PHEMT example]
The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix ...
Duff, C, Sloan, R
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A 5.25GHz GaAs PHEMT power amplifier for 802.11a application
2010 International Conference on Microwave and Millimeter Wave Technology, 2010A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P 1dB ), small signal gain of 25 ...
Yanjun Peng +5 more
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Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs
IEEE Electron Device Letters, 2004The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-/spl mu/m GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically identified using scanning transmission electron microscopy. Further energy dispersive analysis with X-ray (EDX) analysis confirms the Ti diffusion into the AlGaAs Schottky barrier layer and the ...
Y.C. Chou +9 more
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Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
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Accurate Small-Signal Model Extraction for pHEMT on GaAs
International Journal of Infrared and Millimeter Waves, 2007An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by
Lei Wang, Rui-Min Xu, Bo Yan
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Mismatch Based Implementation of W Band LNA Using GaAs pHEMTs
2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)Ultra-low noise W Band amplifier has been implemented using 0.1um GaAs pHEMT technology. Four stages common source degeneration topology has been used to achieve less noise figure and stability. The bias network is designed to ensure stability from DC to 120 GHz.
Sharma S. S. +5 more
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GaAs pHEMT Damage under High Power MMW Injection
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022Mingwen Zhang +3 more
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GaAs pHEMT Traveling Wave Amplifiers up to 50 GHz
2022 International Siberian Conference on Control and Communications (SIBCON), 2022D.S. Danilov +3 more
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