Results 191 to 200 of about 4,243 (238)
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High-efficiency GaAs solar cells
IEEE Transactions on Electron Devices, 1984An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement.
R.C. Knechtli, R.Y. Loo, G.S. Kamath
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IEEE Transactions on Electron Devices, 1967
Thin-film solar cells utilizing polycrystalline gallium-arsenide films have been made and investigated to determine their suitability for future solar-power systems. The gallium-arsenide films are vapor deposited onto substrates of molybdenum or aluminum foil.
P. Vohl +5 more
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Thin-film solar cells utilizing polycrystalline gallium-arsenide films have been made and investigated to determine their suitability for future solar-power systems. The gallium-arsenide films are vapor deposited onto substrates of molybdenum or aluminum foil.
P. Vohl +5 more
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Antireflection layers for GaAs solar cells
Journal of Applied Physics, 1982The results of reflectance and transmittance calculation for various single and double layer optical coatings on GaAs solar cells are presented. An optimization technique has been used to calculate the optimum thicknesses of the layers which result in maximum transmission of photons at the GaAs surface taking into consideration the solar spectrum in ...
N. D. Arora, J. R. Hauser
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A coverglass for GaAs solar cells
IEEE Conference on Photovoltaic Specialists, 2002A new borosilicate-type coverglass material, CMG, with a thermal expansion coefficient matched to GaAs over a temperature range in excess of -180 degrees C to +520 degrees C is described. The glass also has the standard coverglass properties of excellent optical transmission, radiation stability, low solar absorptance, and high emissivity. By using CMG
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Modelling of perimeter recombination in GaAs solar cells
Microelectronics Journal, 2005Abstract To investigate perimeter recombination current in heteroface GaAs solar cells, two models were proposed; the first concerned the analysis of recombination at the surface that intersects the space-charge layer and the second dealt with recombination at the quasi-neutral region. Recombination at the depleted layer surface has a 2 kT character
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AlGaAs/GaAs superlattice solar cells
Progress in Photovoltaics: Research and Applications, 2011ABSTRACTA theoretical model is performed to study the viability of the AlGaAs/GaAs superlattice solar cell (SLSC). Using the Transfer Matrix Method, the conditions for resonant tunneling are established for a particular SL geometry with variably spaced quantum wells.
Maykel Courel +2 more
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Grown junction GaAs solar cell
1975 International Electron Devices Meeting, 1975Using multiple layer liquid phase epitaxial (LPE) growth techniques, p(Al x Ga 1-x As:Ge)-p(GaAs:Ge)-n+(GaAs:Te) solar cells were fabricated. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths.
C.C. Shen, G.L. Pearson
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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996
This paper describes investigations of GaAs solar cells grown on (100) GaP by MOCVD. This work is being carried out as part of an effort to fabricate GaAs and other III-V cells from film structures grown on silicon substrates coated with a pseudomorphic GaP film.
L.C. Olsen +4 more
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This paper describes investigations of GaAs solar cells grown on (100) GaP by MOCVD. This work is being carried out as part of an effort to fabricate GaAs and other III-V cells from film structures grown on silicon substrates coated with a pseudomorphic GaP film.
L.C. Olsen +4 more
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GaAs solar cells: Structure and technology
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, 2002The status of advanced GaAs-based solar cell structures and technologies is discussed. Efficiencies exceeding 21% AM0, yield distribution and radiation testing data are reported for GaAs solar cells on GaAs substrates. The first functional devices of thinned solar cells (2 cm*2cm>20%) are presented. >
M. Braun +5 more
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Photoluminescent characterization of GaAs solar cells
Applied Physics Letters, 1979Photoluminescence excitation measurements are shown to accurately determine the spectral response of Ga1−xAlxAs-GaAs heterojunction solar cells. The technique is applicable to as-grown structures prior to processing into final devices and can also be used to study postgrowth techniques designed to enhance the spectral response of such devices.
G. D. Pettit, J. M. Woodall, H. J. Hovel
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