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Modeling of InAs/GaAs Quantum Dot Solar Cells
2013 European Modelling Symposium, 2013This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration and modeled.
Ayman Rizk +2 more
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Weldability of GaAs solar cells on either GaAs or Ge substrates
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, 1988A three-dimensional, time-dependent model is developed for parallel gap welding of GaAs/GaAs and GaAs/Ge solar cells. Both GaAs/GaAs and GaAs/Ge solar cells have been welded successfully. However, variations in welding conditions can lead to defects that affect the electrical performance or the reliability of cells interconnected into arrays.
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AlGaAs/GaAs heterostructure solar cells
Eight structures of Heterostructure Solar Cells have been designed and fabricated, by Molecular Beam Epitaxy (MBE) and by Liquid Phase Epitaxy (LPE) technologies. The first group, which consists of six structures: one of GaAlAs Schottky Barrier Diode, one of constant band gap window layer GaAlAs(p)/GaAs(n) heterojunction and three of step or stair caseopenaire +1 more source
GaInP/GaAs multijunction solar cells
Solar Cells, 1987J.M. Olson, A. Kibbler, T. Gessert
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GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio
ACS Photonics, 2021Anjan Mukherjee +2 more
exaly
Processing of GaAs solar cells
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, 1988openaire +1 more source
Effect and optimization of ZnO layer on the performance of GaInP/GaAs tandem solar cell
Micro and Nanostructures, 2022Achour Saadoune +2 more
exaly
18.5% efficient graphene/GaAs van der Waals heterostructure solar cell
Nano Energy, 2015Wenchao Chen +2 more
exaly

