Results 201 to 210 of about 4,243 (238)

Proton damage in GaAs solar cells

IEEE Transactions on Electron Devices, 1984
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
J.W. Wilson, G.H. Walker, R.A. Outlaw
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A Monolithic GaAs Solar Cell Array

Japanese Journal of Applied Physics, 1981
Series-connected multi-junction solar cells have a number of important advantages over single junction cells because of the high open circuit voltage, e.g., the reduction of the series resistance effects in the context of system design and the suitability to the consumer electronic photo-cells.
Kazuya Masu, Quan Ying-Shu, Makoto Konagai, Kiyoshi Takahashi   +3 more
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The Role of Be in  ( GaAl ) As / GaAs Solar Cells

Journal of The Electrochemical Society, 1982
Some fundamental properties of beryllium in (GaAl)As/GaAs solar cells were investigated. The diffusion of Be into GaAs during LPE growth of Be-doped p-Ga 0.2 Al 0.8. As was first investigated in order to control the junction depth. The temperature dependence of the diffusion coefficient was found to take the form D = D /SUB o/ exp(-E /SUB o/ /kT ...
Kazuya Masu, Shin‐ichi Nakatsuka, Makoto Konagai, Kiyoshi Takahashi   +3 more
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GaAs Solar Cell Test Facility

Japanese Journal of Applied Physics, 1982
A hybrid type (electricity and heat) GaAs solar cell test facility has been made to evaluate total characteristics of GaAs cell and to study the energy conversion system. The size of solar collector is 3.4 m ×2.1 m and 60 GaAs cells with Fresnel lenses are attached on it.
Maumi Kawashima, Yoshikado Hosoda, Chizuru Suzawa, Toshiro Shimada, Kenya Motoyoshi, Yukihiro Sasatani   +5 more
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Space solar cell performance for advanced GaAs and Si solar cells

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, 1988
The relative performances of the panel components of space power systems that incorporate advanced GaAs and Si cells in both rigid and flexible (including advanced photovoltaic array) configurations are analyzed. Realistic assumptions about the panel components are made. Various performance parameters are calculated.
J. Tracy, J. Wise
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Energy yield evaluation for field operation of solar cells in Singapore: GaAs/GaAs tandem vs. GaAs single-junction solar cells

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017
Tandem solar cells are one of the most promising ways to exceeding the one-sun efficiency limit of single-junction (SJ) solar cells. However, compared to SJ solar cells, tandem solar cells often experience larger energy yield losses in the field, due to variations in operating conditions (i.e. spectrum, irradiance and operating temperature).
Maung Thway, Zekun Ren, Yaung, Kevin Nay, Haohui Liu, Liu, Zhe, Raj, Samuel, Chua, Soo Jin, Aberle, Armin G., Buonassisi, Tonio, Peters, Ian Marius, Lin, Fen   +10 more
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Surface Nanostructure Optimization for GaAs Solar Cell Application

Japanese Journal of Applied Physics, 2012
Numerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination.
Hong, Lei, Rusli, Yu, Hongyu, Wang, Xincai, Wang, Hao, Zheng, Hongyu   +5 more
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Characterization of a GaAs/GaAsBi pin solar cell

Semiconductor Science and Technology, 2019
Abstract The structural and photovoltaic properties of the GaAs/GaAsBi pin solar cell with GaAs 0.983 Bi 0.017 active layer are investigated by optical and electrical measurement techniques.
Agageldi Muhammetgulyyev, Omer Goksel Erbas, Baris Kinaci, Omer Donmez, Yasar Gurkan Celebi, Ayse Erol   +5 more
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High-efficiency GaInP/GaAs tandem solar cells

Journal of Propulsion and Power, 1994
We report on multijunction GaInP/GaAs photovoltaic cells with total‐area efficiencies of 29.5% at one‐sun concentration and air mass (AM) 1.5 global and 25.7% one‐sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions.
K.A. Bertness, D.J. Friedman, S.R. Kurtz, A.E. Kibbler, C. Kramer, J.M. Olson   +5 more
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ALGASS/GAAS Solar Cell With Back-Surface Alternating Contacts (GAAS BAC Solar Cell)

2018
The disclosure provides a solar cell design featuring p-or-n type GaAs with alternating p-n junction regions on the back-surface of the cell, opposite incident solar irradiance. Various layers of p-or-n type GaAs are interfaced together to collect charge carriers, and a thin layer of AlGaAS is applied to the front and back surfaces to prevent ...
Michael, Sherif, O'Connor, Joseph E.
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