Results 51 to 60 of about 314,945 (334)

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

, 2016
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However,
Aharonovich, Igor, Berhane, Amanuel M., Bodrog, Zoltán, Englund, Dirk R., Fiedler, Saskia, Gali, Adam, Jeong, Kwang-Yong, Palacios, Tomas, Schroder, Tim, Schröder, Tim, Toth, Milos, Vico Trivino, Noelia   +11 more
core   +1 more source

Scalable Thermal Engineering via Femtosecond Laser‐Direct‐Written Phononic Nanostructures

Advanced Functional Materials, EarlyView.
This study demonstrates that femtosecond laser‐induced periodic surface structures (fs‐LIPSS) can function as phononic metasurfaces, reducing thermal conductivity below the plain thin‐film limit. Phonon Monte Carlo analysis reveals that the periodic structures restrict phonon mean free paths.
Hiroki Hamma, Roman Anufriev, Kazuyoshi Fushinobu, Masahiro Nomura, Byunggi Kim   +4 more
wiley   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source

Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The Journal of Engineering, 2015
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the
Shaofei Zhang, David Arto Laleyan, Qi Wang, Zetian Mi   +3 more
doaj   +1 more source

Magnetic studies of GaN nanoceramics

, 2006
The synthesis, morphology and magnetization measurements of GaN nanoceramics obtained under high pressure are reported. In particular the effect of grain size on magnetic properties of GaN nanopowders and nanoceramics was investigated.
Nyk, M., Strek, W., Zaleski, A. J.
core   +1 more source

Nanolayer‐Encapsulated Stretchable Liquid‐Metal Sheets for Thermal Management

Advanced Functional Materials, EarlyView.
A stretchable liquid metal sheet with both high thermal conductivity and mechanical flexibility is developed. Its trilayer structure, comprising copper‐particle‐dispersed gallium liquid metal encapsulated by styrene‐butadiene‐styrene nanosheets, shows 40.4 W m−1 K−1 conductivity, elongation exceeding 200%, and retention of 96% of its initial ...
Daisuke Kuse, Yudai Kaneko, Ryohei Fujita, Tatsuhiro Horii, Daishi Shiojiri, Yuta Ozawa, Kyohei Nagatake, Tamami Takano, Yutaka Isoda, Aoi Koishikawa, Takashi Goto, Ai Ueno, Shoji Maruo, Kazuhide Ueno, Toshinori Fujie, Hosei Nagano, Hiroki Ota   +16 more
wiley   +1 more source

Modeling phonon thermal conductivity in spatially confined GaN nanofilms under stress fields and phonon surface scattering

AIP Advances, 2019
Thermal performance of nanomaterials has always been a significant part of semiconductor research, which is the key problem in the development and design of various micro/nanoelectronic devices.
Linli Zhu, Xiaoya Tang, Jiachuan Wang, Yang Hou   +3 more
doaj   +1 more source

GaAs(111)A and B in hydrazine sulfide solutions : extreme polarity dependence of surface adsorption processes

, 2009
Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to ...
Berkovits, V. L., Chiaradia, P., Doyle, B. P., Nannarone, S., Paget, D., Rowe, A. C. H., Tereshchenko, O. E., Ulin, V. P.   +7 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Excitons with anisotropic effective mass [PDF]

, 1997
We present a simple analytic scheme for calculating the binding energy of excitons in semiconductors that takes full account of the existing anisotropy in the effective mass, as a complement to the qualitative treatment in most textbooks.
Arno Schindlmayr, Ashcroft N W
core   +3 more sources