Results 61 to 70 of about 314,945 (334)

Frontier Advances of Emerging High‐Entropy Anodes in Alkali Metal‐Ion Batteries

Advanced Functional Materials, EarlyView.
Recent advances in microscopic morphology control of high‐entropy anode materials for alkali metal‐ion batteries. Abstract With the growing demand for sustainable energy, portable energy storage systems have become increasingly critical. Among them, the development of rechargeable batteries is primarily driven by breakthroughs in electrode materials ...
Liang Du, Kaidi Zhang, Liang Wang, Di Zhao, Mengqing Hu, Mingli Li, Ming Zhou, Zhenzhen Wu, Mengyang Dong, Bo Fu, Porun Liu, Yun Wang, Hongxia Wang, Yuantong Gu, Lei Zhang   +14 more
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells

, 2012
This paper presents the preliminary results of optical characterization using spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin films with medium indium content (0 ...
McLaughlin, D. V. P., Pearce, Joshua M.
core   +3 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics Letters, 2023
This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure.
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto   +8 more
doaj   +1 more source

Gallium Nitride Metalens for Image Decryption

Crystals, 2021
As the demand for secure digital data continues to increase, image encryption and decryption have recently received tremendous attention. The rapid development of ultrathin metasurfaces has mainly been driven by the desire for the introduction of novel ...
Meng-Hsin Chen, Jia-Ying Li, Vin-Cent Su
doaj   +1 more source

Phase-change chalcogenide glass metamaterial [PDF]

, 2009
Combining metamaterials with functional media brings a new dimension to their performance. Here we demonstrate substantial resonance frequency tuning in a photonic metamaterial hybridized with an electrically/optically switchable chalcogenide glass.
B. Gholipour, C. C. Huang, D. W. Hewak, E. Di Fabrizio, F. De Angelis, K. F. MacDonald, K. Knight, N. I. Zheludev, Palik E. D., Z. L. Sámson   +9 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Ultra-thin titanium nitride films for refractory spectral selectivity [PDF]

, 2018
We demonstrate a selectively emitting optical Fabry-P\'erot resonator based on a few-nm-thin continuous metallic titanium nitride film, separated by a dielectric spacer from an optically thick titanium nitride back-reflector, which exhibits excellent ...
An, Liqiong, Bozhevolnyi, Sergey I., Chirumamilla, Manohar, Mortensen, N. Asger, Pedersen, Kjeld, Roberts, Alexander S., Wang, Deyong   +6 more
core   +2 more sources

Mixed‐Metal Promotion in a Manganese‐Molybdenum Oxynitride as Catalyst to Integrate C─C and C─N Coupling Reactions for the Direct Synthesis of Acetonitrile from Syngas and Ammonia

Advanced Materials, EarlyView.
Transition metal oxy/carbo‐nitrides show great promise as catalysts for sustainable processes. A Mn‐Mo mixed‐metal oxynitride attains remarkable performance for the direct synthesis of acetonitrile, an important commodity chemical, via sequential C─N and C─C coupling from syngas (C1) and ammonia (N1) feedstocks.
M. Elena Martínez‐Monje, Wilson Henao, Tania Rodenas, Patricia Concepción, Virginia Pérez Dieste, Alexander Missyul, Giovanni Agostini, Gonzalo Prieto   +7 more
wiley   +1 more source