Results 151 to 160 of about 18,669 (218)
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Broadband Gallium Nitride (GaN) Power Amplifiers
ECS Transactions, 2013Broadband Gallium Nitride (GaN) power amplifiers (PAs) capable of delivering 100 Watts of continuous power from 225 MHz to 2 GHz are reported using GaN power transistors fabricated with 0.5 micron GaN-on-SiC foundry process. The measured third-order intermodulation distortion (IMD3) signal amplitude is below -28 dBc.
S. K. Leong, K. Shenai
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2015
GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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Sensor Letters, 2020
In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in
Wafa Maati, Abdelkader Hamdoune
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In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in
Wafa Maati, Abdelkader Hamdoune
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Modern power switches: the Gallium Nitride (GaN) technology
2014 9th IEEE Conference on Industrial Electronics and Applications, 2014Silicon Power MOSFETs, with more than fifty years of development, are widely accepted and applied in power converters. Gallium Nitride (GaN) power devices are commercially available in recent years, but the device performance and application have not been fully developed. These devices include Schottky Barrier Diode (SBD) and P-I-N rectifiers,??
Cynthia Abi Abboud +4 more
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Wurtzite Gallium Nitride (α-GaN)
1999GaN-based III–V nitride semiconductors currently attract extensive attention for their potential electronic and optoelectronic device applications, such as blue-UV light-emitting diodes and laser diodes [1,2]. GaN films have been grown with a wide range of growth techniques, including CVD, MOCVD, and MBE.
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Gallium Nitride (GaN) High Power Electronics (FY11)
2012Abstract : This report covers work done for the Director's Research Initiative (DSI) on Gallium Nitride (GaN) High Power Electronics (HPE) in which GaN devices are assessed in comparison to those fabricated from silicon carbide (SiC). We show that for low power applications (less than 1500 V) GaN diodes should have a lower on-resistance, and therefore ...
Shuai Zhou +5 more
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1999
Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
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Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
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Advanced power electronic devices based on Gallium Nitride (GaN)
2015 IEEE International Electron Devices Meeting (IEDM), 2015It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some of the recent
Daniel Piedra +10 more
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Characterization of gallium nitride (GaN) blue LEDs
Proceedings of SPIE, 1995Abstract Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LED's are a double heterojunction structure of InGaN/A1GaN that have a peak output at 450 mu. Other groups have investigated these devices for full color displays.
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