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Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor
2014 IEEE Central America and Panama Convention (CONCAPAN XXXIV), 2014In this paper an effective method for modeling parasitic capacitances of Gallium Nitride (GaN) FET transistors is presented. The proposed method is a modification of a method that was proposed for Gallium Arsenide (GaAs) transistors. The modification consists of the computation of a constant relating to the asymmetry of the transistor when it is ...
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
Iron Acceptors in Gallium Nitride (GaN)
Materials Science Forum, 1993Karin Maier +6 more
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Reflection coefficient and optical conductivity of gallium nitride GaN
2017Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2???10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV ...
Akinlami, J.O., Olateju, I.O.
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Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs
2014D.S. Meyaard +3 more
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Gallium Nitride (GAN) RF Challenge; BAE Design Testing
2021John Penn +3 more
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Multidisciplinary standards of care and recent progress in pancreatic ductal adenocarcinoma
Ca-A Cancer Journal for Clinicians, 2020Aaron J Grossberg +2 more
exaly