Results 11 to 20 of about 57,224 (287)

Investigation on β-Ga2O3-Based Schottky Barrier Diode with Floating Metal Rings

open access: yesCrystals, 2023
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software.
Suhao Yao   +6 more
doaj   +1 more source

Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures

open access: yesResults in Physics, 2023
Given the critical impact of high-temperature environments on the detection performance and stability of deep ultraviolet (DUV) photonic devices, especially in urgent demands from fields including high-temperature industries and flame detection, the ...
Maolin Zhang   +6 more
doaj   +1 more source

High Thermal Stability of κ-Ga2O3 Grown by MOCVD

open access: yesCrystals, 2021
We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high ...
Junhee Lee   +3 more
doaj   +1 more source

Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal

open access: yesJin'gangshi yu moliao moju gongcheng, 2022
Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects.
Cheng WU   +4 more
doaj   +1 more source

Preparations, properties and applications of gallium oxide nanomaterials – A review

open access: yesNano Select, 2022
Gallium oxide (Ga2O3) is an important wide bandgap transparent conductive oxide with many excellent properties, which is widely used in many fields such as catalysis, electroluminescence, biology, and so on.
Feng Shi, Hengyang Qiao
doaj   +1 more source

Indium-gallium-zinc oxide thin-film preparation via single-step radio frequency sputter deposition using mixed-oxide powder targets [PDF]

open access: yesArchives of Electrical Engineering, 2023
Indium gallium zinc oxide (In–Ga–Zn–O) thin films, which are transparent conductive films for liquid crystals and electroluminescent displays, were fabricated via singlestep sputter deposition using one target containing different proportions of indium ...
Takahiko Satake   +2 more
doaj   +1 more source

Preparation and Study of Cadmium Oxide Doped Gallium Oxide Thin Films and application of Gas Sensor

open access: yesJournal of Kufa-Physics, 2022
In this paper, the structure and optical properties of pure cadmium oxide films, and doped with gallium oxide have been achieved, the films were deposited on glass and silicon substrates, with different ratios (1,3,5,7)% via spry pyrolysis method, at ...
Salah hamd, Asmiet Ramizy, Isam Ibrahim
doaj   +1 more source

Disorder-Induced Ordering in Gallium Oxide Polymorphs [PDF]

open access: yesPhysical Review Letters, 2022
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in
Alexander Azarov   +5 more
openaire   +4 more sources

Synthesis of chemically pure b-phase powders of gallium(III) oxide

open access: yesКонденсированные среды и межфазные границы, 2022
The purpose of our study was to develop an optimal procedure for the synthesis of the b-phase of gallium(III) oxide with a high degree of chemical purity.
Alexander M. Samoylov   +3 more
doaj   +1 more source

Flexible gallium oxide electronics

open access: yesSemiconductor Science and Technology, 2023
Abstract Flexible Ga2O3 devices are becoming increasingly important in the world of electronic products due to their unique properties. As a semiconductor, Ga2O3 has a much higher bandgap, breakdown electric field, and dielectric constant than silicon, making it a great choice for next-generation semiconductor materials.
Xiao Tang, Yi Lu, Xiaohang Li
openaire   +2 more sources

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