Results 21 to 30 of about 57,224 (287)

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Characterization of Gallium Oxide/glass thin films grown by RF magnetron sputtering

Cumhuriyet Science Journal, 2020
In the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency (RF) magnetron sputtering at 300 °C substrate temperature on glass substrate using Ga2O3 target with 99.99% purity.
Soheil Mobtakeri, Ebru Senadim Tuzemen, Emre Gür, Ali Özer   +3 more
doaj   +1 more source

Competitive segregation of gallium and indium at heterophase Cu–MnO interfaces studied with transmission electron microscopy [PDF]

, 2003
This paper concentrates on the possible segregation of indium and gallium and competitive segregation of gallium and indium at atomically flat parallel {111}-oriented Cu–MnO interfaces.
Hosson, J.Th.M. De,, Kooi, B.J.,, Mogck, S.,   +2 more
core   +4 more sources

Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions [PDF]

, 2015
The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities.
Al-Yassiry, M.M., Al-Yassiry, Mustafa M., Archibald, S.J., Archibald, Stephen J., Baghdadi, N., Baghdadi, Neazar, Burke, B.P., Burke, Benjamin P., Cawthorne, Christopher, Clemente, G.S., Clemente, Goncalo S., Clemente, Gonçalo S., Domarkas, Juozas, Gibbs, P., Gibbs, Peter, Kownacka, Alicja E., Lorch, Mark, Nigam, S., Nigam, Shubhanchi, Pickles, M., Pickles, Martin, Tripier, R., Tripier, Raphael, Tripier, Raphaël   +23 more
core   +2 more sources

Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures [PDF]

, 2008
Test devices have been fabricated on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either Ga₂O₃ or a stack of Ga₂O₃ and Gd ...
Craven, A.J., Droopad, R., Long, A.R., Longo, P., Passlack, M., Paterson, G.W., Thayne, I.G., Wilson, J.A.   +7 more
core   +1 more source

Photocatalytic removal of cyclohexane on visible light-driven gallium oxide/carbon nitride composites prepared by impregnation [PDF]

, 2015
Carbon nitride is a material of interest for photocatalytic reactions due to its catalytic and visible light absorption properties. However, its photocatalytic activity is still low.
Lintang, Hendrik O., Shu, Chin Lee, Wee, Shern Chew, Yuliati, Leny   +3 more
core   +2 more sources

Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga₂O₃ Films Using Post-Thermal Treatments

IEEE Photonics Journal, 2019
The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated.
Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong-Sing Wuu   +5 more
doaj   +1 more source

Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases

AIP Advances, 2023
Thermodynamic analyses and experimental demonstrations were performed to investigate whether cation-exchange reactions (CERs) with metal chloride gases are a feasible technique for forming heterostructures of group-III sesquioxides.
Ken Goto, Tomo Ueno, Yoshinao Kumagai
doaj   +1 more source

Aero-Ga₂O₃ Nanomaterial Electromagnetically Transparent from Microwaves to Terahertz for Internet of Things Applications

Nanomaterials, 2020
In this paper, fabrication of a new material is reported, the so-called Aero-Ga2O3 or Aerogallox, which represents an ultra-porous and ultra-lightweight three-dimensional architecture made from interconnected microtubes of gallium oxide with nanometer ...
Tudor Braniste, Mircea Dragoman, Sergey Zhukov, Martino Aldrigo, Vladimir Ciobanu, Sergiu Iordanescu, Liudmila Alyabyeva, Francesco Fumagalli, Giacomo Ceccone, Simion Raevschi, Fabian Schütt, Rainer Adelung, Pascal Colpo, Boris Gorshunov, Ion Tiginyanu   +14 more
doaj   +1 more source

Electronic Materials with Wide Band Gap: Recent Developments [PDF]

, 2014
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II.
Klimm, D.
core   +4 more sources