Results 11 to 20 of about 1,088,192 (320)

MFCT-GAN: multi-information network to reconstruct CT volumes for security screening [PDF]

Journal of Intelligent Manufacturing and Special Equipment, 2022
Purpose – At airport security checkpoints, baggage screening is aimed to prevent transportation of prohibited and potentially dangerous items. Observing the projection images generated by X-rays scanner is a critical method.
Yixiang Jiang
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Design of GaN-based user side DC/DC converter in DC distribution network [PDF]

电力工程技术, 2022
The isolated DC/DC converter connects the low-voltage direct current (LVDC) distribution network and the user-side DC load serving as an important equipment in LVDC distribution network. In this paper,LLC resonant converter with zero voltage switching on
JIN Haozhe, CHEN Wu
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Use of artificial intelligence in the field of sustainable architecture: Current knowledge [PDF]

Architecture Papers of the Faculty of Architecture and Design STU, 2021
Innovative technologies help automate the work of the designer. A 3D model of the building can be used to calculate the required values. This will also allow you to create associative sections that, when changing the geometry of the 3D model ...
Ing. arch. Veronika Krausková, assoc. prof. Ing. arch. Henrich Pifko, CSc.   +1 more
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GAN-Control: Explicitly Controllable GANs [PDF]

2021 IEEE/CVF International Conference on Computer Vision (ICCV), 2021
We present a framework for training GANs with explicit control over generated images. We are able to control the generated image by settings exact attributes such as age, pose, expression, etc. Most approaches for editing GAN-generated images achieve partial control by leveraging the latent space disentanglement properties, obtained implicitly after ...
Shoshan, Alon, Bhonker, Nadav, Kviatkovsky, Igor, Medioni, Gerard   +3 more
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The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]

Engineering and Technology Journal, 2023
The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar, Makram Fakhri, Mohammed AbdulRazzaq, Subash C. B. Gopinath   +3 more
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High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA III

Journal of Synchrotron Radiation, 2022
A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-
S. Levcenko, R. Biller, T. Pfeiffelmann, K. Ritter, H. H. Falk, T. Wang, S. Siebentritt, E. Welter, C. S. Schnohr   +8 more
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Cumulant GAN

IEEE Transactions on Neural Networks and Learning Systems, 2023
In this paper, we propose a novel loss function for training Generative Adversarial Networks (GANs) aiming towards deeper theoretical understanding as well as improved stability and performance for the underlying optimization problem. The new loss function is based on cumulant generating functions giving rise to \emph{Cumulant GAN}.
Yannis Pantazis, Dipjyoti Paul, Michail Fasoulakis, Yannis Stylianou, Markos A. Katsoulakis   +4 more
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Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

ETRI Journal, 2022
Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%.
Ling-Feng Mao
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Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-RangeBuck-Boost Converters [PDF]

International Journal of Electronics and Telecommunications, 2021
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter.
Mikołaj Koszel, Piotr Grzejszczak, Bartosz Nowatkiewicz, Kornel Wolski   +3 more
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On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [PDF]

Optics Express, 2014
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work.
Kyaw, Z., Zhang, Z.-H., Liu W., Tan, S.T., Ju, Z.G., Zhang X.L., Ji, Y., Hasanov, N., Zhu, B., Lu, S., Zhang, Y., Sun X.W., Demir, H. V.   +12 more
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