Results 21 to 30 of about 1,047,492 (261)

Morphology Control of One-Dimensional gallium nitride Nanostructures by Modulating the Crystallinity of Sacrificial gallium oxide Templates [PDF]

Archives of Metallurgy and Materials, 2021
In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity.
Yun Taek Ko, Mijeong Park, Jingyeong Park, Jaeyun Moon, Yong-Ho Choa, Young-In Lee   +5 more
doaj   +1 more source

Deep Fake Image Detection Based on Pairwise Learning

Applied Sciences, 2020
Generative adversarial networks (GANs) can be used to generate a photo-realistic image from a low-dimension random noise. Such a synthesized (fake) image with inappropriate content can be used on social media networks, which can cause severe problems ...
Chih-Chung Hsu, Yi-Xiu Zhuang, Chia-Yen Lee   +2 more
doaj   +1 more source

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Nanophotonics, 2023
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max, Eng John J. H., Mu Zhao, Chenot Sebastien, Brändli Virginie, de Mierry Philippe, Gao Weibo, Zúñiga-Pérez Jesús   +7 more
doaj   +1 more source

High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA III

Journal of Synchrotron Radiation, 2022
A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-
S. Levcenko, R. Biller, T. Pfeiffelmann, K. Ritter, H. H. Falk, T. Wang, S. Siebentritt, E. Welter, C. S. Schnohr   +8 more
doaj   +1 more source

Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-RangeBuck-Boost Converters [PDF]

International Journal of Electronics and Telecommunications, 2021
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter.
Mikołaj Koszel, Piotr Grzejszczak, Bartosz Nowatkiewicz, Kornel Wolski   +3 more
doaj   +1 more source

Low resistance GaN/InGaN/GaN tunnel junctions [PDF]

Applied Physics Letters, 2013
Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 × 10−4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described.
Rajan, Siddharth, Akyol, Fatih, Park, Pil Sung, Krishnamoorthy, Sriram   +3 more
openaire   +3 more sources

GAN-EM: GAN Based EM Learning Framework [PDF]

Proceedings of the Twenty-Eighth International Joint Conference on Artificial Intelligence, 2019
Expectation maximization (EM) algorithm is to find maximum likelihood solution for models having latent variables. A typical example is Gaussian Mixture Model (GMM) which requires Gaussian assumption, however, natural images are highly non-Gaussian so that GMM cannot be applied to perform image clustering task on pixel space.
Zhao, Wentian, Wang, Shaojie, Xie, Zhihuai, Shi, Jing, Xu, Chenliang   +4 more
openaire   +2 more sources

Adoption of Artificial Intelligence in Small and Medium-Sized Enterprises in Spain: The Role of Competences and Skills [PDF]

Amfiteatru Economic
This article explores the determinants of the adoption of artificial intelligence (AI) in small and medium-sized enterprises (SMEs) with special attention to the impact of competencies and skills.
Mammadov Huseyn, África Ruiz-Gándara, Luis González-Abril , Isidoro Romero   +3 more
doaj   +1 more source

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]

Journal of Applied Physics, 2003
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S, Keller, S, Wu, Y, Speck, J S, DenBaars, S P, Mishra, U K   +5 more
openaire   +2 more sources

First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]

, 2006
First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P., Kattner, U., van de Walle, A.   +2 more
core   +1 more source