Results 21 to 30 of about 1,088,192 (320)
Morphology Control of One-Dimensional gallium nitride Nanostructures by Modulating the Crystallinity of Sacrificial gallium oxide Templates [PDF]
Archives of Metallurgy and Materials, 2021 In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity.
Yun Taek Ko +5 more
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H-GAN: the power of GANs in your Hands [PDF]
2021 International Joint Conference on Neural Networks (IJCNN), 2021 Paper accepted at The International Joint Conference on Neural Networks (IJCNN ...
Giorgos Karvounas +9 more
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Конденсированные среды и межфазные границы, 2022 This review covers studies dedicated to the search for and development of sorbents for the extraction of the caesium-137. The review analyses a new method for growing SiC epitaxial films on Si, which is based on the coordinated substitution ...
Sergey A. Kukushkin, Andrey V. Osipov
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Ultra-wide-field Fundus Image Synthesis Using Various GAN Models
JOIV: International Journal on Informatics Visualization, 2022 Many people lose sight due to diabetic retinopathy. The reason that diabetic retinopathy is dangerous is that it cannot return to its pre-onset state after the disease's onset. Most patients take fundus images that capture the retina, and the doctor uses
Ara Ko, Jungwon Cho
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer [PDF]
Optics Express, 2013 This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H. +9 more
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
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IJAIN (International Journal of Advances in Intelligent Informatics), 2020 The image forgery process can be simply defined as inserting some objects of different sizes to vanish some structures or scenes. Satellite images can be forged in many ways, such as copy-paste, copy-move, and splicing processes.
Mohamed Mahmoud Fouad +2 more
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Growth of GaN on porous SiC and GaN substrates [PDF]
Journal of Electronic Materials, 2003 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD) to evaluate possible advantage of epitaxy on a porous substrate. For the growth of GaN on porous SiC by PAMBE, transmission electron microscopy (TEM) observations indicate that the exposed ...
Ashutosh Sagar +8 more
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Cubic GaN and InGaN/GaN quantum wells
Applied Physics Reviews, 2022 LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced ...
Binks, DJ +3 more
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Forensic face image generation and recognition [PDF]
Revista Română de Informatică și Automatică, 2022 One of the toughest Heterogeneous face recognition scenarios, involving the comparison of face images residing in different modalities, is face photo-sketch recognition.
Adithya VIKRAM +2 more
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