Results 21 to 30 of about 1,158,498 (310)
Deep Fake Image Detection Based on Pairwise Learning
Applied Sciences, 2020 Generative adversarial networks (GANs) can be used to generate a photo-realistic image from a low-dimension random noise. Such a synthesized (fake) image with inappropriate content can be used on social media networks, which can cause severe problems ...
Chih-Chung Hsu +2 more
doaj +1 more source
Nanophotonics, 2023 The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max +7 more
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Journal of Synchrotron Radiation, 2022 A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-
S. Levcenko +8 more
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Morphology Control of One-Dimensional gallium nitride Nanostructures by Modulating the Crystallinity of Sacrificial gallium oxide Templates [PDF]
Archives of Metallurgy and Materials, 2021 In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity.
Yun Taek Ko +5 more
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Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-RangeBuck-Boost Converters [PDF]
International Journal of Electronics and Telecommunications, 2021 The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter.
Mikołaj Koszel +3 more
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Low resistance GaN/InGaN/GaN tunnel junctions [PDF]
Applied Physics Letters, 2013 Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 × 10−4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described.
Rajan, Siddharth +3 more
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Ultra-wide-field Fundus Image Synthesis Using Various GAN Models
JOIV: International Journal on Informatics Visualization, 2022 Many people lose sight due to diabetic retinopathy. The reason that diabetic retinopathy is dangerous is that it cannot return to its pre-onset state after the disease's onset. Most patients take fundus images that capture the retina, and the doctor uses
Ara Ko, Jungwon Cho
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GAN-EM: GAN Based EM Learning Framework [PDF]
Proceedings of the Twenty-Eighth International Joint Conference on Artificial Intelligence, 2019 Expectation maximization (EM) algorithm is to find maximum likelihood solution for models having latent variables. A typical example is Gaussian Mixture Model (GMM) which requires Gaussian assumption, however, natural images are highly non-Gaussian so that GMM cannot be applied to perform image clustering task on pixel space.
Zhao, Wentian +4 more
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Adoption of Artificial Intelligence in Small and Medium-Sized Enterprises in Spain: The Role of Competences and Skills [PDF]
Amfiteatru EconomicThis article explores the determinants of the adoption of artificial intelligence (AI) in small and medium-sized enterprises (SMEs) with special attention to the impact of competencies and skills.
Mammadov Huseyn +3 more
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
openaire +2 more sources