Results 61 to 70 of about 1,376,697 (345)

Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures [PDF]

open access: yesMRS Internet Journal of Nitride Semiconductor Research, 2004
Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures.
C. L. Reynolds   +6 more
openaire   +2 more sources

Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

open access: yes, 2003
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots.
Alexander A. Balandin   +8 more
core   +1 more source

(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer [PDF]

open access: yes, 2007
Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process ...
Bejtka, K.   +9 more
core   +1 more source

BiVi-GAN: Bivariate Vibration GAN

open access: yesSensors
In the domain of prognosis and health management (PHM) for rotating machinery, the criticality of ensuring equipment reliability cannot be overstated. With developments in artificial intelligence (AI) and deep learning, there have been numerous attempts to use those methodologies in PHM.
HoeJun Jeong   +3 more
openaire   +3 more sources

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

open access: yesOptics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui   +9 more
openaire   +2 more sources

Adoption of Artificial Intelligence in Small and Medium-Sized Enterprises in Spain: The Role of Competences and Skills [PDF]

open access: yesAmfiteatru Economic
This article explores the determinants of the adoption of artificial intelligence (AI) in small and medium-sized enterprises (SMEs) with special attention to the impact of competencies and skills.
Mammadov Huseyn   +3 more
doaj   +1 more source

High-Performance Color-Converted Full-Color Micro-LED Arrays

open access: yesApplied Sciences, 2020
Color-converted micro-LED displays consisting of mono-blue-colored micro LED arrays and color-conversion materials have been used to achieve full color while reliving the transfer and epitaxial growth of three different-colored micro LEDs.
Won Hee Kim   +7 more
doaj   +1 more source

Electron diffusion length and lifetime in p-type GaN [PDF]

open access: yes, 1998
We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z.   +3 more
core   +1 more source

RL-GAN-Net: A Reinforcement Learning Agent Controlled GAN Network for Real-Time Point Cloud Shape Completion

open access: yes, 2019
We present RL-GAN-Net, where a reinforcement learning (RL) agent provides fast and robust control of a generative adversarial network (GAN). Our framework is applied to point cloud shape completion that converts noisy, partial point cloud data into a ...
Kim, Young Min   +2 more
core   +1 more source

Low resistance GaN/InGaN/GaN tunnel junctions [PDF]

open access: yesApplied Physics Letters, 2013
Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 × 10−4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described.
Rajan, Siddharth   +3 more
openaire   +5 more sources

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