Results 181 to 190 of about 5,182 (292)

Noble Metal (Pt, Au)-Doped PdS₂ Monolayer as a Promising Candidate for O₃ Sensing in Air-Insulated Switchgears from First-Principles Investigations. [PDF]

ACS Omega
Wu G, Guo Z, Ying S, Yuan T, Chen X, Li J, Wei Z, Yang G, Guo J, Gong Y, Cui H.   +10 more
europepmc   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

BL46XU: an applied hard X-ray photoelectron spectroscopy beamline HAXPES II at SPring-8. [PDF]

J Synchrotron Radiat
Yasuno S, Takagi Y, Yasui A, Seo O, Osaka T, Sugahara M, Senba Y, Yamazaki H, Koyama T, Shimizu S, Saito T, Ohashi H, Kawamura N, Nakajima K, Motomura K, Nishihara T, Sato M, Tamenori Y, Yabashi M.   +18 more
europepmc   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

Physics-informed neural networks for robust equivalent damping parameter inversion and fault diagnosis in gas-insulated switchgear vibration systems. [PDF]

Sci Rep
Li Y, Lv Y, Yan Y, Gao X, Jiang X, Liu Y.   +5 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Dual Comb Spectrometer for the Determination of Stable Isotopic Ratios of Atmospheric CO₂ with Sub-Permille Precision at Atmospheric Pressure. [PDF]

Anal Chem
Goldschmidt J, Brugger N, Nitzsche L, Nitzsche P, Dinc C, Weber C, Breunig I, Schmitt K, Kühnemann F, Wöllenstein J.   +9 more
europepmc   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

Advanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen‐Karni   +7 more
wiley   +1 more source

A system solution for a 100 kA class high temperature superconducting line for HL-LHC and for wider energy applications. [PDF]

Sci Rep
Ballarino A, Bailey W, Barth C, Cruikshank P, Gahier V, Leclercq Y, Pasdeloup F, Willering G, Yang Y.   +8 more
europepmc   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source