Results 111 to 120 of about 37,307 (275)
The GaSb-CoGa1.3 eutectic composite as a promising material for tensometry
Moldavian Journal of the Physical Sciences, 2013 New small-size tensoresistors based on the GaSb-CoGa1.3 semiconductor eutectic composite have been designed; they exhibit linear, nonhysteresis, and thermostable characteristics, stable parameters, and high reliability and operate in a temperatures range
Rahimov, R. +4 more
doaj
Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
, 2015 III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current.
Huang, Jun Z. +4 more
core +1 more source
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
Applied Physics A, 2018 A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As2 dimers on the surface.
A. Jasik +8 more
semanticscholar +1 more source
Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol
AIP Advances, 2016 The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force ...
E. Papis-Polakowska +6 more
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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy [PDF]
, 2010 E. Luna +5 more
openalex +1 more source
Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure [PDF]
, 2018 Tiến Đại Nguyễn +5 more
openalex +1 more source
THE EMPLOYEE MOTIVATION – THE KEY FACTOR IN BUSINESS SUCCESS
International Journal of Innovative Technologies in Economy, 2018 We present you the work: “The Employee Motivation – the Key Factor in Business Success”, where we present the results of the research on this issue conducted by the universities of California and Stanford, based on which the author in cooperation with ...
Dzneladze L. T., Khachidze N. D.
doaj +1 more source
Effective g-factors of carriers in inverted InAs/GaSb bilayers [PDF]
, 2016 Xiaoyang Mu, Gerard Sullivan, Rui-Rui Du
openalex +1 more source
Indonesian Journal of Applied PhysicsTheoretical studies of optical spin polarization and cubic anisotropy in cubic semiconductors GaAs and GaSb are performed. We use Kane wave functions to calculate the eight-level transition matrix elements permitted by the optical selection rules.
M. Idrish Miah
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