Results 171 to 180 of about 37,714 (225)

Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

Advanced Functional Materials, 2023
The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this
Zixu Sa, Fengjing Liu, Xinming Zhuang, Yanxue Yin, Z. Lv, Mingxu Wang, J Zhang, Kepeng Song, Feng Chen, Zai‐xing Yang   +9 more
semanticscholar   +1 more source

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays.

ACS Nano, 2022
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years.
Kai Zhang, Zhihui Ren, Huichen Cao, Lingling Li, Ying Wang, Wei Zhang, Yubao Li, Haitao Yang, Y. Meng, J. Ho, Zhongming Wei, G. Shen   +11 more
semanticscholar   +1 more source

Performance Investigation of GaSb/Si Heterojunction Based Gate Underlap and Overlap Vertical TFET Biosensor

IEEE Transactions on Nanobioscience, 2022
The present paper estimates the performance of vertically developed double gate GaSb/Si tunnel field-effect transistor (V-DGTFET) biosensor with source pocket.
A. Theja, Meena Panchore
semanticscholar   +1 more source

GaSb Film is a Saturable Absorber for Dissipative Soliton Generation in a Fiber Laser.

ACS Applied Materials and Interfaces, 2022
Nanotechnology is at the forefront of scientific research and offers great prospects for the development of technology. As a type of III-V semiconductor, GaSb materials exhibit numerous outstanding optical and electrical characteristics that are very ...
Lihui Pang, Meng Zhao, Qiyi Zhao, Lu Li, Rongfeng Wang, Rongqian Wu, Yi Lv, Wenjun Liu   +7 more
semanticscholar   +1 more source

Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration.

Small, 2022
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic
Dong Liu, Fengjing Liu, Yue Liu, Z. Pang, Xinming Zhuang, Yanxue Yin, Shengpan Dong, Longbing He, Yang Tan, Lei Liao, Feng Chen, Zai‐xing Yang   +11 more
semanticscholar   +1 more source

Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire

IEEE Electron Device Letters, 2021
The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength of 1550 nm is the least loss band for transmission communication, and the study of photodetectors working at 1550 nm ...
Zhihui Ren, Pan Wang, Kai Zhang, Wenhao Ran, Juehan Yang, Yueyang Liu, Zheng Lou, G. Shen, Zhongming Wei   +8 more
semanticscholar   +1 more source

Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

IEEE Transactions on Electron Devices, 2020
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect transistor (V-TFET) with a source pocket to enhance the performance of the device.
M. Tripathy, A. K. Singh, A. Samad, S. Chander, K. Baral, P. Singh, S. Jit   +6 more
semanticscholar   +1 more source

GaSb-InAs-GaSb heterostructures studied under hydrostatic pressure

Physical Review B, 1987
We report transport measurements on GaSb-InAs-GaSb heterostructures under hydrostatic pressure (up to 1.2 GPa) and high magnetic field (up to 18 T) at low temperature. The pressure-induced decrease of the carrier concentrations is analyzed in terms of two distinct causes: an intrinsic charge transfer between the GaSb valence band and InAs conduction ...
, Beerens, , Grégoris, , Portal, , Mendez, , Chang, , Esaki   +5 more
openaire   +2 more sources