Results 111 to 120 of about 6,152 (186)

Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi₂O₂Se for Self-Powered Near-Infrared Photodetection and Photocommunication. [PDF]

Nanomicro Lett
Wang G, Sa Z, Zang Z, Li P, Wang M, Yang B, Wang X, Yin Y, Yang ZX.   +8 more
europepmc   +1 more source

Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications. [PDF]

Sci Rep, 2023
Calderón JA, Quiroz HP, Terán CL, Manso-Silván M, Dussan A, Muñoz Noval Á.   +5 more
europepmc   +1 more source

A Strain-Compensated InGaAs/InGaSb Type-II Superlattice Grown on InAs Substrates for Long-Wavelength Infrared Photodetectors. [PDF]

Nanomaterials (Basel)
Zhou H, Liu C, Chen Y.
europepmc   +1 more source

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices. [PDF]

ACS Appl Mater Interfaces, 2023
Alshahrani D, Kesaria M, Jiménez JJ, Kwan D, Srivastava V, Delmas M, Morales FM, Liang B, Huffaker D.   +8 more
europepmc   +1 more source

<i>In Situ</i> Study of Axial GaSb/GaAs Nanowire Heterostructure Formation. [PDF]

ACS Nanosci Au
Marnauza M, Sjökvist R, Kraina A, Jacobsson D, Dick KA.   +4 more
europepmc   +1 more source

Accelerated Discovery of Cost-Effective Photoabsorber Materials for Near-Infrared (λ = 1600 nm) Photodetector Applications. [PDF]

ACS Mater Au
Zhao W, Yang RX, Kaplan AD, Persson KA.
europepmc   +1 more source

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics. [PDF]

Sci Adv
Meyer M, Baumbach J, Krishtopenko S, Wolf A, Emmerling M, Schmid S, Kamp M, Jouault B, Rodriguez JB, Tournie E, Müller T, Thomale R, Bastard G, Teppe F, Hartmann F, Höfling S.   +15 more
europepmc   +1 more source

Multilayer Epitaxial Heterostructures with Multi-Component III-V:Fe Magnetic Semiconductors. [PDF]

Nanomaterials (Basel), 2023
Kudrin AV, Lesnikov VP, Kriukov RN, Danilov YA, Dorokhin MV, Yakovleva AA, Tabachkova NY, Sobolev NA.   +7 more
europepmc   +1 more source

Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates

Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

The Formation of an Interface and Its Energy Levels Inside a Band Gap in InAs/GaSb/AlSb/GaSb M-Structures. [PDF]

Materials (Basel)
Śliż P, Jarosz D, Pasternak M, Marchewka M.   +3 more
europepmc   +1 more source