Results 151 to 160 of about 2,109,434 (243)
Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method. [PDF]
Li B +7 more
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Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]
Huang J +5 more
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100mm GaSb substrate manufacturing for IRFPA epi growth
SPIE Proceedings, 2012Mega-pixel FPAs in both MWIR and LWIR spectral bands based on Sb strained layer superlattices and nBn epitaxial structures grown on GaSb substrates have recently demonstrated impressive performances at high operating temperatures. An essential component of SLS epitaxial growth initiation is the starting wafer flatness, smoothness and haze.
Lisa P. Allen +8 more
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Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal
Applied Physics A, 2012This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices.
B. Klein +3 more
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Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2013In this paper, the authors report on the growth of InAs/GaSb type-II strained layer superlattice (T2SL) material on (111)B GaSb substrates. Both substrate temperature and V/III beam equivalent pressure ratio were varied to optimize the crystalline and optical quality of the T2SL material.
Elena Plis +8 more
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Type-II InAs/GaSb superlattice grown on InP substrate
Journal of Crystal Growth, 2013Abstract Type-II InAs/GaSb superlattices are promising for the absorption layers of mid-infrared sensors. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. InP substrate is attractive due to high transparency, relatively small lattice mismatch and near thermal expansion ...
K. Miura, Y. Iguchi, Y. Kawamura
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IEEE Transactions on Electron Devices, 2022
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article.
A. Singh, M. Tripathy, K. Baral, S. Jit
semanticscholar +1 more source
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article.
A. Singh, M. Tripathy, K. Baral, S. Jit
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Au spreading on GaSb substrates
Materials Science and Engineering: B, 1993Abstract Gold spreading on monocrystal substrates of GaSb during thermal annealing at temperatures ranging from 300 °C to 400 °C is studied. The spreading areas form a geometrical pattern related to the crystallographic structure of the GaSb substrates as observed under optical and electron microscopy. The peripheries of the spreading areas are along
S.S. Tan, A.G. Milnes
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Applied Physics Letters, 2018
We report the growth and characterization of long wavelength infrared type-II InAs/InAs1-xSbx superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate grown by metalorganic chemical vapor deposition.
Donghai Wu +3 more
semanticscholar +1 more source
We report the growth and characterization of long wavelength infrared type-II InAs/InAs1-xSbx superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate grown by metalorganic chemical vapor deposition.
Donghai Wu +3 more
semanticscholar +1 more source

