Results 151 to 160 of about 6,152 (186)

High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

IEEE Electron Device Letters, 2013
We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., λ100%, was 5.6 μm at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 μm, a dark current density Jd of 0.53 A/cm2 (at -50 mV) and specific detectivity D* = 8.5 × 109 ...
E. Plis, B. Klein, S. Myers, N. Gautam, E. P. Smith, S. Krishna   +5 more
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Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2013
In this paper, the authors report on the growth of InAs/GaSb type-II strained layer superlattice (T2SL) material on (111)B GaSb substrates. Both substrate temperature and V/III beam equivalent pressure ratio were varied to optimize the crystalline and optical quality of the T2SL material.
Elena Plis, Brianna Klein, Stephen Myers, Nutan Gautam, Thomas J. Rotter, Ralph L. Dawson, Sanjay Krishna, Sang Jun Lee, Young Heon Kim   +8 more
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Strain Accommodation in GaSb/AlSb Superlattices on (001) GaSb Substrates with AlSb Buffers

Japanese Journal of Applied Physics, 1989
We report the observation that AlSb layers thinner than the epilayer critical thickness for the onset of plastic relaxation undergo lattice relaxation when used as buffers for GaSb/AlSb superlattices on (001) GaSb substrates. It is found that this is induced by the external stress from the overlaying superlattice, and that the mechanism is ...
Antonio Basanes Villaflor, Masamitsu Yoshizawa, Morihiko Kimata   +2 more
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Characterization of GaSb Epitaxial Layers on GaSb and GaAs Substrates by Infrared Reflectivity

physica status solidi (b), 1992
AbstractInfrared reflectivity measurements on p‐GaSb epitaxial layers on n‐GaSb substrate and n‐GaSb epitaxial layers on semi‐insulating (SI) GaAs are made to determine the mobility and density of free carriers in the bulk and the layer simultaneously by fitting a theoretical model to experimental data.
A. Mezerreg, C. Llinares
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Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

Applied Physics A, 2012
This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices.
B. Klein, J. Montoya, N. Gautam, S. Krishna   +3 more
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Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4

Journal of Crystal Growth, 1995
Abstract The MOMBE (metalorganic molecular beam epitaxy) growth of GaSb on GaSb substrates with different orientations, (100), (511), (411), (311), (211) and (111), and on patterned (100) GaSb substrates was investigated for the first time using TEG and Sb4 as source materials. With increasing substrate temperatures from 450 to 600°C, the growth rate
D. Marx, K. Miyamoto, H. Asahi, X.F. Liu, A.B. Villaflor, K. Miki, S. Gonda, S. Shimomura, S. Hiyamizu   +8 more
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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

Thin Solid Films, 2010
GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively.
Ruiting Hao, Shukang Deng, Lanxian Shen, Peizhi Yang, Jielei Tu, Hua Liao, Yingqiang Xu, Zhichuan Niu   +7 more
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Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

IEE Proceedings - Optoelectronics, 1998
The authors have performed theoretical and experimental investigations of the chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide treatment of the GaSb substrate improves morphology and interface abruptness of the GaSb/GaInAsSb heterostructures grown by liquid ...
T.V. L'vova, I.A. Andreev, V.P. Ulin, M.P. Mikhailova, Y.P. Yakovlev, E.V. Kunitsyna   +5 more
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100mm GaSb substrate manufacturing for IRFPA epi growth

SPIE Proceedings, 2012
Mega-pixel FPAs in both MWIR and LWIR spectral bands based on Sb strained layer superlattices and nBn epitaxial structures grown on GaSb substrates have recently demonstrated impressive performances at high operating temperatures. An essential component of SLS epitaxial growth initiation is the starting wafer flatness, smoothness and haze.
Lisa P. Allen, J. Patrick Flint, Greg Meshew, Gordon Dallas, John Trevethan, Dmitri Lubyshev, Yueming Qiu, Joel M. Fastenau, Amy W. K. Liu   +8 more
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Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

Journal of Crystal Growth, 2004
Abstract The preparation of GaSb substrates for epitaxial growth of GaSb and GaInAsSb is reported. The effects of several wet chemical etchants and ambient atmosphere during substrate heating on surface morphology and interfacial impurities were investigated.
C.A Wang, D.A Shiau, A Lin
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