Results 151 to 160 of about 2,109,434 (243)

100mm GaSb substrate manufacturing for IRFPA epi growth

SPIE Proceedings, 2012
Mega-pixel FPAs in both MWIR and LWIR spectral bands based on Sb strained layer superlattices and nBn epitaxial structures grown on GaSb substrates have recently demonstrated impressive performances at high operating temperatures. An essential component of SLS epitaxial growth initiation is the starting wafer flatness, smoothness and haze.
Lisa P. Allen   +8 more
openaire   +2 more sources

Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

Applied Physics A, 2012
This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices.
B. Klein   +3 more
openaire   +2 more sources

Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2013
In this paper, the authors report on the growth of InAs/GaSb type-II strained layer superlattice (T2SL) material on (111)B GaSb substrates. Both substrate temperature and V/III beam equivalent pressure ratio were varied to optimize the crystalline and optical quality of the T2SL material.
Elena Plis   +8 more
openaire   +2 more sources

Type-II InAs/GaSb superlattice grown on InP substrate

Journal of Crystal Growth, 2013
Abstract Type-II InAs/GaSb superlattices are promising for the absorption layers of mid-infrared sensors. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. InP substrate is attractive due to high transparency, relatively small lattice mismatch and near thermal expansion ...
K. Miura, Y. Iguchi, Y. Kawamura
openaire   +2 more sources

GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application

IEEE Transactions on Electron Devices, 2022
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article.
A. Singh, M. Tripathy, K. Baral, S. Jit
semanticscholar   +1 more source

Au spreading on GaSb substrates

Materials Science and Engineering: B, 1993
Abstract Gold spreading on monocrystal substrates of GaSb during thermal annealing at temperatures ranging from 300 °C to 400 °C is studied. The spreading areas form a geometrical pattern related to the crystallographic structure of the GaSb substrates as observed under optical and electron microscopy. The peripheries of the spreading areas are along
S.S. Tan, A.G. Milnes
openaire   +1 more source

Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition

Applied Physics Letters, 2018
We report the growth and characterization of long wavelength infrared type-II InAs/InAs1-xSbx superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate grown by metalorganic chemical vapor deposition.
Donghai Wu   +3 more
semanticscholar   +1 more source

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