Results 161 to 170 of about 6,152 (186)

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Journal of Materials Science: Materials in Electronics, 1998
MOCVD growth and characterization of GaSb-rich and InAs-rich GaInAsSb on GaSb substrates was investigated. The surface of InAs-rich GaInAsSb epilayers showed morphological features very different from those on GaSb-rich films. Solid compositions of Ga1-xInxAsySb1-y films were dependent on growth temperature and the input source ratios, such as Ga/III ...
YONGQIANG Ning, TIANMING Zhou, BAOLIN Zhang, HONG Jiang, SHUWEI Li, GUANG Yuan, YUAN Tian, YIXIN Jin   +7 more
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Long wavelength interband cascade lasers on GaSb substrates

Infrared Remote Sensing and Instrumentation XXV, 2017
Interband Cascade Lasers (ICLs) are semiconductor laser sources emitting photons in the mid-infrared wavelength region. In the GaSb material system, ICLs cover the ~2.7 µm to ~5.6 µm wavelength range operating in continuous wave mode. In this spectral region, the low power consumption of ICLs is unrivaled compared to diode lasers and quantum cascade ...
Sven Höfling, Anne Schade
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GaSb film growth on GaAs substrate by MBE

SPIE Proceedings, 2005
The GaSb characteristics grown by molecular beam epitaxy (MBE) on GaAs substrates was reported. The abruptness of the interfaces, the degree of intermixing and the anion incorporation greatly affect the material quality. The RHEED patterns provide information on the surface structure and morphology of the sample and dictate surface reconstruction ...
Lin Li, Guo-jun Liu, Yong Wang, Mei Li
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Heteroepitaxial growth of GaSb on Si(001) substrates

Journal of Crystal Growth, 2004
Abstract We investigated the heteroepitaxial growth of GaSb on Si(0 0 1) substrate. We found that high-quality GaSb films can be grown on Si substrate by introducing an AlSb initiation layer. We obtained a narrow X-ray diffraction rocking curve and over-1400-nm emission from GaSb/AlGaSb quantum wells by optimizing the growth temperature and thickness
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Naoki Ohtani   +3 more
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Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

Bulletin of the Russian Academy of Sciences: Physics, 2011
Fianite is a single crystal of cubic solid solutions based on zirconium dioxide (ZrO2) or hafnium dioxide (HfO2) with stabilizing oxides of yttrium, scandium, and lanthanides. It is characterized by a unique combination of physical and chemical properties, making it a promising material for wide use in electronics. In this work, we consider new uses of
Yu. N. Buzynin, M. N. Drozdov, A. N. Buzynin, V. V. Osiko, B. N. Zvonkov, Yu. N. Drozdov, O. I. Khrykin, A. E. Luk’yanov, F. A. Luk’yanov, V. G. Shengurov, S. A. Denisov   +10 more
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Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Applied Physics Letters, 2000
Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs ...
S. S. Yi, D. M. Hansen, C. K. Inoki, D. L. Harris, T. S. Kuan, T. F. Kuech   +5 more
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Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

Journal of Crystal Growth, 2018
Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs.
F. Predan, J. Ohlmann, S. Mrabet, F. Dimroth, D. Lackner   +4 more
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MOVPE growth of Ga(As)SbN on GaSb substrates

Journal of Crystal Growth, 2008
Abstract GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN.
J.Y.T. Huang, L.J. Mawst, S. Jha, T.F. Kuech, D. Wang, L. Shterengas, G. Belenky, J.R. Meyer, I. Vurgaftman   +8 more
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(In)GaSb/AlGaSb quantum wells grown on Si substrates

Thin Solid Films, 2007
We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems.
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Naoki Ohtani   +4 more
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MBE growth of high quality HgCdSe on GaSb substrates

Infrared Physics & Technology, 2018
Abstract This paper demonstrates MBE growth of high quality HgCdSe infrared materials on GaSb (211)B substrates. The as-grown Hg1−xCdxSe samples have a range of x-values (x = 0.37–0.18) and cut-off wavelengths (λc = 3.9–10.4 μm at 80 K), and show typical n-type semiconductor behaviour. At a measurement temperature of 80 K, the as-grown HgCdSe samples
W. Lei, Y.L. Ren, I. Madni, G.A. Umana-Membreno, L. Faraone   +4 more
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