Results 161 to 170 of about 2,109,434 (243)

Growth of GaSb on GaAs substrates

Journal of Crystal Growth, 1994
Abstract The initial growth of GaSb on GaAs substrates by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) has been investigated both in-situ and ex-situ. The in-situ technique used was quasi-elastic light scattering (QLS) and the ex-situ technique was atomic force microscopy (AFM) measurements.
R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, L. Smith, P.J. Walker   +5 more
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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

Science in China Series E: Technological Sciences, 2009
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer.
Jie Guo, HuiJuan Chen, WeiGuo Sun, RuiTing Hao, YingQiang Xu, ZhiChuan Niu   +5 more
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High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

IEEE Electron Device Letters, 2013
We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., λ100%, was 5.6 μm at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 μm, a dark current density Jd of 0.53 A/cm2 (at -50 mV) and specific detectivity D* = 8.5 × 109 ...
E. Plis, B. Klein, S. Myers, N. Gautam, E. P. Smith, S. Krishna   +5 more
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Strain Accommodation in GaSb/AlSb Superlattices on (001) GaSb Substrates with AlSb Buffers

Japanese Journal of Applied Physics, 1989
We report the observation that AlSb layers thinner than the epilayer critical thickness for the onset of plastic relaxation undergo lattice relaxation when used as buffers for GaSb/AlSb superlattices on (001) GaSb substrates. It is found that this is induced by the external stress from the overlaying superlattice, and that the mechanism is ...
Antonio Basanes Villaflor, Masamitsu Yoshizawa, Morihiko Kimata   +2 more
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Characterization of GaSb Epitaxial Layers on GaSb and GaAs Substrates by Infrared Reflectivity

physica status solidi (b), 1992
AbstractInfrared reflectivity measurements on p‐GaSb epitaxial layers on n‐GaSb substrate and n‐GaSb epitaxial layers on semi‐insulating (SI) GaAs are made to determine the mobility and density of free carriers in the bulk and the layer simultaneously by fitting a theoretical model to experimental data.
A. Mezerreg, C. Llinares
openaire   +1 more source

Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4

Journal of Crystal Growth, 1995
Abstract The MOMBE (metalorganic molecular beam epitaxy) growth of GaSb on GaSb substrates with different orientations, (100), (511), (411), (311), (211) and (111), and on patterned (100) GaSb substrates was investigated for the first time using TEG and Sb4 as source materials. With increasing substrate temperatures from 450 to 600°C, the growth rate
D. Marx, K. Miyamoto, H. Asahi, X.F. Liu, A.B. Villaflor, K. Miki, S. Gonda, S. Shimomura, S. Hiyamizu   +8 more
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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

Thin Solid Films, 2010
GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively.
Ruiting Hao, Shukang Deng, Lanxian Shen, Peizhi Yang, Jielei Tu, Hua Liao, Yingqiang Xu, Zhichuan Niu   +7 more
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Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

IEE Proceedings - Optoelectronics, 1998
The authors have performed theoretical and experimental investigations of the chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide treatment of the GaSb substrate improves morphology and interface abruptness of the GaSb/GaInAsSb heterostructures grown by liquid ...
T.V. L'vova, I.A. Andreev, V.P. Ulin, M.P. Mikhailova, Y.P. Yakovlev, E.V. Kunitsyna   +5 more
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Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

Journal of Crystal Growth, 2004
Abstract The preparation of GaSb substrates for epitaxial growth of GaSb and GaInAsSb is reported. The effects of several wet chemical etchants and ambient atmosphere during substrate heating on surface morphology and interfacial impurities were investigated.
C.A Wang, D.A Shiau, A Lin
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Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Journal of Materials Science: Materials in Electronics, 1998
MOCVD growth and characterization of GaSb-rich and InAs-rich GaInAsSb on GaSb substrates was investigated. The surface of InAs-rich GaInAsSb epilayers showed morphological features very different from those on GaSb-rich films. Solid compositions of Ga1-xInxAsySb1-y films were dependent on growth temperature and the input source ratios, such as Ga/III ...
YONGQIANG Ning, TIANMING Zhou, BAOLIN Zhang, HONG Jiang, SHUWEI Li, GUANG Yuan, YUAN Tian, YIXIN Jin   +7 more
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