Results 21 to 30 of about 2,139,815 (232)
Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays
Journal of Low Power Electronics and Applications, 2021 Floating-gate (FG) transistors are a primary means of providing nonvolatile digital memory in standard CMOS processes, but they are also key enablers for large-scale programmable analog systems, as well.
Brandon Rumberg +4 more
doaj +1 more source
Adding Binary Numbers with Discrete Solitons in Waveguide Arrays [PDF]
Phys. Scr., 95, 085107 (2020), 2021 We present a design and protocol to add binary numbers using discrete solitons in waveguide arrays. We show that the nonlinear interaction between discrete solitons in waveguide arrays can be exploited to design half and full adders. By modulating the separation between waveguides and introducing control solitons, we achieve the performance of an XOR ...
arxiv +1 more source
Remote capacitive sensing in two-dimension quantum-dot arrays [PDF]
, 2020 We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process.
Duan, Jingyu +5 more
core +2 more sources
The Synthesis Method of Logic Circuits Based on the NMOS-Like RRAM Gates
IEEE Access, 2021 The synthesis method of logic circuits based on the RRAM (Resistive Random Access Memory) devices is of great concern in recent years. Inspired by the CMOS-like RRAM based logic gates, this work proposes a NMOS-like RRAM gate family.
Xiaole Cui, Ye Ma, Feng Wei, Xiaoxin Cui
doaj +1 more source
Frontiers in Physics, 2022 In large-area dynamic imaging, an active pixel sensor (APS) is proposed. However, there is a trade-off between signal-to-noise ratio (SNR) and spatial resolution.
Yunfeng Hu +4 more
doaj +1 more source
Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory
Nanoscale Research Letters, 2022 Three-terminal (3-T) thyristor random-access memory is explored for a next-generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate–cathode voltage (V GC,ST ...
Hyangwoo Kim +6 more
doaj +1 more source
Double gate operation of metal nanodot array based single electron device
Scientific Reports, 2022 Multidot single-electron devices (SEDs) can enable new types of computing technologies, such as those that are reconfigurable and reservoir-computing. A self-assembled metal nanodot array film that is attached to multiple gates is a candidate for use in ...
Takayuki Gyakushi +4 more
doaj +1 more source
A simple laser locking system based on a field-programmable gate array. [PDF]
Review of Scientific Instruments, 2016 Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays ...
N. B. Jørgensen +7 more
semanticscholar +1 more source
Three-dimensional neuroelectronic interface for peripheral nerve stimulation and recording: realization steps and contacting technology [PDF]
, 1994 A three-dimensional array of microelectrodes for use in intraneural stimulation and recording is presented. The 128 electrodes are at the tips of silicon needles, which are electrically insulated from each other.
Frieswijk, T.A. +2 more
core +6 more sources
Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs
IEEE Journal of the Electron Devices Society, 2018 In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etching ...
Ching-Ting Lee, Hung-Yin Juo
doaj +1 more source