Results 71 to 80 of about 1,176,513 (293)

Biaxial Gaussian Beams, Hermite–Gaussian Beams, and Laguerre–Gaussian Vortex Beams in Isotropy-Broken Materials

open access: yesPhotonics
We have developed the paraxial approximation for electromagnetic fields in arbitrary isotropy-broken media in terms of the ray–wave tilt and the curvature of materials’ Fresnel wave surfaces. We have obtained solutions of the paraxial equation in the form of biaxial Gaussian beams, which is a novel class of electromagnetic field distributions in ...
openaire   +3 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Intensity Profile Reshaping of a Spectrally Broadened Gaussian Beam

open access: yesPhotonics
Research into the spatial reshaping of monochromatic laser beams grew significantly in the late 1990s due to improvements in the fabrication of diffractive optical elements.
Sofiane Haddadi   +3 more
doaj   +1 more source

Modulation of the optical beam with orbital angular momentum in hot atomic rubidium vapor

open access: yesAIP Advances, 2020
The effect of self-focusing and defocusing of the optical beam, which is caused by the interaction between a strong light field and medium, plays an important role in nonlinear optics.
Lei Zeng   +8 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Ultraviolet metasurface-enabled flat-top beam shaping with size preservation uniformity and broadband robustness

open access: yesScientific Reports
Ultraviolet lithography based on Gaussian beam sources plays a critical role in integrated circuit fabrication, yet the intrinsic strong central intensity and rapid edge decay of Gaussian beams often lead to blurred feature edges, tapered sidewalls, and ...
Wanting Li   +8 more
doaj   +1 more source

Research on the Superposition Evolution of Double Laguerre–Gaussian Modes Based on Astigmatic Mode Conversion

open access: yesPhotonics
In this paper, the evolution of the beam from the double Hermite–Gaussian beam superposition state to the double Laguerre–Gaussian beam superposition state is realized based on the astigmatism conversion. Firstly, the tunable output of the double Hermite–
Lingmin Zhao   +5 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Uniformity and Collimation of Incoherence Gaussian Beam With Divergence Based on Only One Fresnel Surface

open access: yesIEEE Photonics Journal, 2016
An incoherence Gaussian beam with divergence is converted to uniformity and collimation simultaneously at a desirable spot size requirement by using one Fresnel surface.
C. M. Tsai
doaj   +1 more source

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