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Facet‐engineered PVP‐capped CuFeSe2 nanocrystals exhibit potent, selective antifungal activity by strongly binding cell‐wall mannan, enabling vacuolar entry and organelle disruption. High‐index facets show superior mannan affinity, validated by theoretical calculations and experiments. CFS‐P induces vacuolar cavitation, mitochondrial abnormalities, and
Zhaohui Wang +10 more
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The effects of nanopillar and nanopit arrays on the morphology and osteogenic differentiation of adipose-derived stem cells. [PDF]
Kang J +8 more
europepmc +1 more source
High-performance organic semiconductor near-infrared and shortwave-infrared photodetectors: a materials and device roadmap. [PDF]
Tan H +8 more
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Thermally Tunable Angular Selectivity of Broadband Directional Thermal Emission. [PDF]
Hwang JS, Xu J, Raman AP.
europepmc +1 more source
Multifunctional Colloidal Quantum Dots-Based Light-Emitting Devices for On-Chip Integration. [PDF]
Li R, Zhao J, Qiao Y, Liu X, Mei S.
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Surface Microstructure Enhanced Cryogenic Infrared Light Emitting Diodes for Semiconductor Broadband Upconversion. [PDF]
Bai P +12 more
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Metamaterial-Enhanced Solar-Driven Processes for Energy Conversion and Water Treatment. [PDF]
Jing X +6 more
europepmc +1 more source
Abstract Metal–insulator–semiconductor structures based on n -Hg 1− x Cd x Te ( x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe.
A V Voitsekhovskii +2 more
exaly +5 more sources
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PEM-effect in graded-gap semiconductor
Solid State Communications, 1978Abstract The photoelectromagnetic (PEM) effect in graded-bandgap semiconductors has been discussed assuming position-dependent band parameters. The semiconductor sample was assumed to be relatively thick with a narrow carrier-excitation region and the equation describing the excess-carrier distributions as a function of position obtained.
J M Pawlikowski
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