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Effect of reradiation on the luminescence of graded-gap semiconductors
Journal of Applied Spectroscopy, 1985Recombination radiation carries definite information on the parameters of semiconductors, which enables the use of luminescence, excited by light (photoluminescence) or an electron beam (cathodoluminescence) for monitoring the parameters of semiconducting graded-gap structures. In this work the authors develop a theory which can be used in the practice
V. F. Kovalenko +2 more
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Interference photoelectromagnetic effect in graded-gap semiconductors
Infrared Physics, 1984Abstract Numerical calculations describing the influence of the interference of internally-reflected radiation on the photoelectromagnetic (PEM) effect in graded energy-gap Cd x Hg 1− x Te structures are presented. The spectral voltage responsivities of graded-gap IR-PEM detectors are reported as functions of the semiconductor structure thickness,
K. Jóźwikowski +2 more
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Photo-emf in Parabolic Graded-Gap Semiconductors
physica status solidi (a), 2001We have calculated the photo-emf in square profile graded band-gap semiconductor structures under local illumination. It is shown that the photo-emf is a linear function of the position of a light strip on the photosensitive surface and it changes the sign when the light strip passes across the center of the structure.
V.M. Aroutiounian +3 more
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Effect of reemission on the photoluminescence spectra of graded-gap semiconductors
Journal of Applied Spectroscopy, 1985Photoluminescence spectra are widely used in photoluminescent methods for monitoring the parameters of graded-gap semiconducting structures in order to determine the basic parameters of such structures. The effect of multiple absorption and emission of recombination radiation photons, which deforms the photoluminescence spectra and can lead to ...
A. I. Bazyk +3 more
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Stimulation of luminescence in graded-gap AlxGa1−x As semiconductors
Semiconductors, 2000The stimulation of photoluminescence in a graded-gap AlxGa1−xAs semiconductor was studied. It is shown that stimulation by external illumination makes it possible to increase the internal quantum yield of luminescence and specify the direction in which stimulated emission propagates. A method is proposed for measuring the internal quantum efficiency.
K. Požela +3 more
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Exciton recycling in graded gap layer-by-layer semiconductor nanocrystal structures
(CLEO). Conference on Lasers and Electro-Optics, 2005., 2005A funnel like band gap profile is realized in a layer-by-layer assembled structure of CdTe nanocrystals. Recycling of trapped excitons leads to efficient energy transfer along the band gap gradient.
T. Franzl +4 more
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The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors
2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET), 2018Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed.
Ihor Storozhenko +2 more
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Semiconductors, 2001
The shape of the band-to-band photoluminescence spectrum for a graded-gap semiconductor in conditions of nonequilibrium charge-carrier transport affected by a built-in quasi-electric field E=e −1∇E g was calculated. It was demonstrated that the distortion of the short-wavelength region of the emission spectra occurs ...
A. I. Bazyk +3 more
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The shape of the band-to-band photoluminescence spectrum for a graded-gap semiconductor in conditions of nonequilibrium charge-carrier transport affected by a built-in quasi-electric field E=e −1∇E g was calculated. It was demonstrated that the distortion of the short-wavelength region of the emission spectra occurs ...
A. I. Bazyk +3 more
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Semiconductors, 2002
The effect of bulk (τ) and radiative (τr) charge-carrier lifetimes on the degree of spatial separation of the regions of the carriers’ generation and radiative recombination in graded-gap semiconductors with the drift transport mechanism in the built-in quasi-electric field of the crystal was investigated experimentally and theoretically.
V. F. Kovalenko +2 more
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The effect of bulk (τ) and radiative (τr) charge-carrier lifetimes on the degree of spatial separation of the regions of the carriers’ generation and radiative recombination in graded-gap semiconductors with the drift transport mechanism in the built-in quasi-electric field of the crystal was investigated experimentally and theoretically.
V. F. Kovalenko +2 more
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On the theory of the photoelectric effect in surface-graded-gap semiconductors
Semiconductors, 2013A correct mathematical model of interband carrier photogeneration by low-intensity optical radiation in surface-graded-gap semiconductors is constructed and analytically considered for the case of strong, including step-like, variations in the graded-gap field in the transition region adjacent to the homogeneous layer.
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