Results 211 to 220 of about 21,870 (244)
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Frequency range of Gunn diodes on base of graded-gap semiconductor nitrides
2012 6th International Conference on Ultrawideband and Ultrashort Impulse Signals, 2012The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN, GaInN and BInN. We had obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered.
I P Storozhenko, Yu V Arkusha
exaly +2 more sources
Thin Solid Films, 2014
Abstract Metal–insulator–semiconductor structures based on HgCdTe are grown by molecular-beam epitaxy. Near-surface graded-gap layers with high CdTe content are formed on both sides of the epitaxial HgCdTe film. Photoelectrical characteristics of these structures are studied experimentally and theoretically.
A V Voitsekhovskii
exaly +3 more sources
Abstract Metal–insulator–semiconductor structures based on HgCdTe are grown by molecular-beam epitaxy. Near-surface graded-gap layers with high CdTe content are formed on both sides of the epitaxial HgCdTe film. Photoelectrical characteristics of these structures are studied experimentally and theoretically.
A V Voitsekhovskii
exaly +3 more sources
Application of epitaxial graded-gap semiconductor layers as broad range photodetectors
Thin Solid Films, 1978Abstract The trends in photodetector development and the properties of graded-gap semiconductors are briefly outlined, and the possibilities for the effective use of the graded-gap structure as a broad range IR and visible detector are presented.
J M Pawlikowski
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Thin Solid Films, 2012
Abstract Metal–insulator–semiconductor structures based on HgCdTe are grown by molecular-beam epitaxy. Near-surface graded-gap layers with a high CdTe content are inserted on both sides of the epitaxial HgCdTe film. The capacitance–voltage characteristics of these structures are studied experimentally.
A V Voitsekhovskii
exaly +3 more sources
Abstract Metal–insulator–semiconductor structures based on HgCdTe are grown by molecular-beam epitaxy. Near-surface graded-gap layers with a high CdTe content are inserted on both sides of the epitaxial HgCdTe film. The capacitance–voltage characteristics of these structures are studied experimentally.
A V Voitsekhovskii
exaly +3 more sources
2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2016
The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz.
I P Storozhenko
exaly +2 more sources
The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz.
I P Storozhenko
exaly +2 more sources
Journal of Electronic Materials, 2015
Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal–insulator–semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the
A V Voitsekhovskii +2 more
exaly +2 more sources
Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal–insulator–semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the
A V Voitsekhovskii +2 more
exaly +2 more sources
Application of Abrupt and Graded Gap Structure in High Speed Semiconductor Devices
Japanese Journal of Applied Physics, 1984A comparison of the speed performance of abrupt and graded gap semiconductor structures is described. It is found that appropriately designed abrupt structure offers superior performance than the graded structure.
L C Chiu
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RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED-GAP SEMICONDUCTORS
Telecommunications and Radio Engineering (English Translation of Elektrosvyaz and Radiotekhnika), 2014I P Storozhenko
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Photomagneto-Electric effect in Graded-Gap Semiconductors
physica status solidi (b), 1963AbstractThe PME effect in an inhomogeneous semiconductor is calculated assuming uniform local mobilities. An experiment is described in which a gap‐gradient is induced in a germanium crystal by means of a pressure gradient. The result is consistent with previously measured values of the pressure dependence of the energy gap.
A. Fortini, J. P. Saint-Martin
openaire +2 more sources
InBN AND GaBN GRADED-GAP GUNN DIODES
Telecommunications and Radio Engineering (English Translation of Elektrosvyaz and Radiotekhnika), 2014 В статье представлены результаты численных экспериментов по генерации электромагнитных колебаний в диапазоне 0,03…0,7 ТГц с помощью n+–n–n+-диодов Ганна на основе варизонных полупроводниковых соединений InBN и GaBN при различном распределении BN.У статті
I P Storozhenko, Yu V Arkusha
exaly +1 more source