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Applied Physics Letters, 1984
We have demonstrated for the first time a pseudo-quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0.53As/InP superlattice. The average composition and the band gap of this structure are spatially varied by gradually changing the thicknesses of the InP and Ga0.47In0.53As layers between 5 and 55 Å while keeping constant the period of ...
F. Capasso +4 more
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We have demonstrated for the first time a pseudo-quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0.53As/InP superlattice. The average composition and the band gap of this structure are spatially varied by gradually changing the thicknesses of the InP and Ga0.47In0.53As layers between 5 and 55 Å while keeping constant the period of ...
F. Capasso +4 more
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Internal photo-effects in graded-gap semiconductors—I. Excess-carrier distributions∗
Infrared Physics, 1980Abstract In the first part, general equations describing the photo-carrier distributions in non-homogeneous (graded-gap) semiconductors under electric internal and external fields are discussed. Equations of the excess-carrier distributions have been written taking into account the effect of internal quasi-electric fields which are characteristic of ...
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Telecommunications and Radio Engineering, 2011
I. P. Storozhenko, E. N. Zhivotova
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I. P. Storozhenko, E. N. Zhivotova
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Composition and Bandgap‐Graded Semiconductor Alloy Nanowires
Advanced Materials, 2012Xiujuan Zhuang, C Z Ning, Anlian Pan
exaly
Photogeneration and carrier recombination in graded gap Cu(In, Ga)Se/sub 2/ solar cells
IEEE Transactions on Electron Devices, 2000H -W Schock, R Noufi, M A Contreras
exaly
Non-additivity of the electrical conductance of the graded gap semiconductors
1979S Kaciulis +3 more
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Formation of graded band-gap in CdZnTe by YAG:Nd laser radiation
Radiation Measurements, 2007A Medvid', L Fedorenko
exaly

