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Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

Applied Physics Letters, 1984
We have demonstrated for the first time a pseudo-quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0.53As/InP superlattice. The average composition and the band gap of this structure are spatially varied by gradually changing the thicknesses of the InP and Ga0.47In0.53As layers between 5 and 55 Å while keeping constant the period of ...
F. Capasso   +4 more
openaire   +1 more source

Internal photo-effects in graded-gap semiconductors—I. Excess-carrier distributions∗

Infrared Physics, 1980
Abstract In the first part, general equations describing the photo-carrier distributions in non-homogeneous (graded-gap) semiconductors under electric internal and external fields are discussed. Equations of the excess-carrier distributions have been written taking into account the effect of internal quasi-electric fields which are characteristic of ...
openaire   +1 more source

RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS

Telecommunications and Radio Engineering, 2011
I. P. Storozhenko, E. N. Zhivotova
openaire   +1 more source

Composition and Bandgap‐Graded Semiconductor Alloy Nanowires

Advanced Materials, 2012
Xiujuan Zhuang, C Z Ning, Anlian Pan
exaly  

New pseudo-quaternary GaInAsP semiconductors: A high speed "High-low" avalanche photodiode with Ga<inf>0.47</inf>In<inf>0.53</inf>As/InP graded gap superlattice

1984 International Electron Devices Meeting, 1984
F. Capasso   +4 more
openaire   +1 more source

Photogeneration and carrier recombination in graded gap Cu(In, Ga)Se/sub 2/ solar cells

IEEE Transactions on Electron Devices, 2000
H -W Schock, R Noufi, M A Contreras
exaly  

Formation of graded band-gap in CdZnTe by YAG:Nd laser radiation

Radiation Measurements, 2007
A Medvid', L Fedorenko
exaly  

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