Results 121 to 130 of about 953,284 (297)

Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut

Advanced Science, EarlyView.
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee, Hyung‐Jin Choi, Kun Hee Ye, Haneul Choi, Byeong‐hyeon Lee, Min‐Seok Kim, Dong‐Hun Han, June Hyuk Lee, Sung Ok Won, Tae Heon Kim, Hye Jung Chang, Jung‐Hae Choi, Seung‐Hyub Baek   +12 more
wiley   +1 more source

Electric-field-induced crystallization of Hf0.5Zr0.5O2 thin film based on phase-field modeling

npj Quantum Materials
Ferroelectricity in crystalline hafnium oxide has attracted considerable attention because of its potential application for memory devices. A recent breakthrough involves electric-field-induced crystallization, allowing HfO2-based materials to avoid high-
Zhaobo Liu, Xiaoming Shi, Jing Wang, Houbing Huang   +3 more
doaj   +1 more source

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Journal of Materiomics
Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials ...
Shaoan Yan, Pei Xu, Gang Li, Yingfang Zhu, Yujie Wu, Qilai Chen, Sen Liu, Qingjiang Li, Minghua Tang   +8 more
doaj   +1 more source

Electrical and chemical characterisation of ultrathin transistor gate dielectric layers [PDF]

, 2005
This work examines the suitability of both ultrathin Silicon Oxynitride (SiON) and Hafnium Silicate (HfSiON) layers to be used as high-permittivity gate dielectrics to serve as a replacement to silicon dioxide (Si0 2 )in future Metal-Oxide-Semiconductor (
O'Connor, Robert
core  

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

PD-L1 aptamer-functionalized degradable hafnium oxide nanoparticles for near infrared-II diagnostic imaging and radiosensitization. [PDF]

Front Bioeng Biotechnol, 2023
Wei M, Shen X, Fan X, Li J, Bai J.
europepmc   +1 more source

Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

, 2019
Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO2-x/Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10(10) and 10(12) ions/cm(2) and evaluated regarding pristine resistance, forming voltage, and data retention ...
Alff, Lambert, Hildebrandt, Erwin, Trautmann, Christina, Sharath, S. U., Petzold, Stefan, Lemke, Jonas   +5 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. [PDF]

Nanomaterials (Basel), 2023
Kahro T, Raudonen K, Merisalu J, Tarre A, Ritslaid P, Kasikov A, Jõgiaas T, Käämbre T, Otsus M, Kozlova J, Alles H, Tamm A, Kukli K.   +12 more
europepmc   +1 more source

Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

Advanced Electronic Materials
Ferroelectricity in hafnium‐based materials has attracted significant research attention and is used in various applications owing to their complementary metal‐oxide‐semiconductor compatibility, scalability, and low‐power operation.
Wonjun Shin, Chang‐Hyeon Han, Jangsaeng Kim, Ryun‐Han Koo, Kyung Kyu Min, Daewoong Kwon   +5 more
doaj   +1 more source