Results 141 to 150 of about 953,284 (297)

Halogen‐Free Anisotropic Atomic‐Layer Etching of HfO2 at Room Temperature

open access: yesSmall Science
Hafnium(IV) oxide (HfO2)‐based materials have attracted substantial interest owing to their outstanding performance in advanced ultrathin semiconductor devices.
Shih‐Nan Hsiao   +5 more
doaj   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning. [PDF]

open access: yesNanomaterials (Basel), 2022
Proust V   +12 more
europepmc   +1 more source

A Monolithic Janus Hydrogel Pressure Sensor for Wearable Motion and Physiological Monitoring

open access: yesAdvanced Science, EarlyView.
This work reports a monolithic Janus hydrogel pressure sensor featuring integrated conductive PEDOT and insulating PEGDA layers. The fabricated device achieves a rapid response time, a wide operating range, and good cyclic durability. The sensor demonstrates robust performance in tracking dynamic human joint motions, offering a scalable strategy for ...
Syed Atif Ali   +7 more
wiley   +1 more source

Nickel‐Catalyzed Three‐Component Difluoroalkylation‐Amination for the Direct Access to Anti‐Inflammatory β‐Difluoroalkyl Amines

open access: yesAdvanced Science, EarlyView.
A nickel‐catalyzed three‐component reductive fluoroalkylation‐amination strategy of N‐vinylamides for the direct access to the α‐amidyl‐β‐difluoroalkyl amines was reported here. The synthetic method features with broad substrate scope, mild conditions, high functional group tolerance, and convenience to handle.
Chang Xu   +8 more
wiley   +1 more source

Optimization of Sputtered Hafnium Zirconium Oxide Ferroelectrics for Memory Applications

open access: yes
Since the initial publication of ferroelectricity in HfO2 thin films in 2011, numerous theories and models have been proposed to elucidate the root of this phenomenon.
Wang, Xuetao
core   +2 more sources

Neuromorphic Devices and Computing for Sensing, Memory, and Control

open access: yesAdvanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu   +2 more
wiley   +1 more source

Home - About - Disclaimer - Privacy