Results 271 to 280 of about 3,015,797 (333)
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An Immunocompetent Hafnium Oxide-Based STING Nanoagonist for Cancer Radio-immunotherapy.
ACS NanocGAS-STING signaling plays a critical role in radiotherapy (RT)-mediated immunomodulation. However, RT alone is insufficient to sustain STING activation in tumors under a safe X-ray dose.
Yuhua Cao +12 more
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Nanoscale Radiotherapy with Hafnium Oxide Nanoparticles
Future Oncology, 2012There is considerable interest in approaches that could improve the therapeutic window of radiotherapy. In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit.Conventional methods were used, implemented in different ways, to explore interactions of these high-atomic ...
Laurence, Maggiorella +7 more
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Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel
Inorganic Chemistry, 1998The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation.
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Social Science Research Network, 2022
Lanthanum-doped HfO2 films were deposited on Si by sol–gel technology. The effects of annealing temperature on the optical properties, interface chemistry, and energy band structure of Lanthanum-doped HfO2 films have been investigated.
Xiang Cui +3 more
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Lanthanum-doped HfO2 films were deposited on Si by sol–gel technology. The effects of annealing temperature on the optical properties, interface chemistry, and energy band structure of Lanthanum-doped HfO2 films have been investigated.
Xiang Cui +3 more
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Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water
Journal of the American Chemical Society, 2008Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) has recently gained interest because of its suitability for fabrication of conformal films with thicknesses in the nanometer range.
Atashi B, Mukhopadhyay +2 more
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Advanced Electronic Materials, 2022
The presence of the top electrode on hafnium oxide‐based thin films during processing has been shown to drive an increase in the amount of metastable ferroelectric orthorhombic phase and polarization performance.
Shelby S. Fields +9 more
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The presence of the top electrode on hafnium oxide‐based thin films during processing has been shown to drive an increase in the amount of metastable ferroelectric orthorhombic phase and polarization performance.
Shelby S. Fields +9 more
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Nuclear Instruments and Methods, 1979
Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
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Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
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Journal of the Less Common Metals, 1969
Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
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Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Ferroelectricity in undoped hafnium oxide
Applied Physics Letters, 2015We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the
Patrick Polakowski, Johannes Müller
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