Results 91 to 100 of about 7,647 (298)

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

Advanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin   +5 more
wiley   +1 more source

Solubility of refractory metals and alloys in potassium and in lithium [PDF]

Solubility of refractory metals and alloys in liquid potassium and ...
Eichelberger, R. L., Johnson, B. G., Mc Kisson, R. L.   +2 more
core   +1 more source

Method of producing refractory composites containing tantalum carbide, hafnium carbide, and hafnium boride Patent [PDF]

, 1969
Production of high strength refractory compounds and microconstituents into refractory metal ...
Herbell, T. P., Quatinetz, M., Weeton, J. W.   +2 more
core   +1 more source

Mechanosynthesis of nanocrystalline ZrB2-based powders by mechanically induced self-sustaining reaction method [PDF]

, 2013
Preparation of nanocrystalline ZrB2-based powder by aluminothermic and magnesiothermic reductions in M/ZrO2/B 2O3 (M = Al or Mg) systems was investigated.
Bafghi, M. Sh, Gotor Martínez, Francisco José, Jalaly, M., Tamizifar, M.   +3 more
core   +1 more source

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Processing and properties of ultra-refractory composites based on Zr- and Hf-borides: state of the art and perspectives [PDF]

, 2010
High performance Ultra-High-Temperature Composites (based on zirconium and hafnium borides) are characterized by relevant and unique thermo-physical and thermo-mechanical properties, suitable for applications in Thermal Protection - Durable TPS and hot ...
Bellosi, Alida, Guicciardi, Stefano, Medri, Valentina, Monteverde, Frederic, Sciti, Diletta, Silvestroni, Laura   +5 more
core   +1 more source

Rapid Electrodeposition of Defect‐Tuned MOF Nanoarchitectures: Synergistic Unlocking Electrochemical Performance via Dual Modulation of Morphology and Electronic Structure

Advanced Science, EarlyView.
This work utilizes rapid electrodeposition and a competitive ligand to tailor crystal fragment/ amorphous MOF structures while Ni incorporation modulates the Co electronic environment. Their synergistic control over morphology and electronic structure accelerates reconstruction into active (oxy)hydroxides, lowers the Co3+/Co4+ oxidation potential ...
Qing Wang, Zehui Yu, Sanghwa Yoon, Zitao Yang, Bongyoung Yoo   +4 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source

Orthosilicates with glaserite-type crystal structures: Na2BaZr[SiO4]2 and Na2BaHf[SiO4]2

Acta Crystallographica Section E: Crystallographic Communications
Single crystal particles of Na2BaZr[SiO4]2 [systematic name: disodium barium zirconium bis(orthosilicate)] and Na2BaHf[SiO4]2 [disodium barium hafnium bis(orthosilicate)] were extracted from grain-grown polycrystals obtained by heating compacts of binary
Hisanori Yamane, Shiro Funahashi, Naoto Hirosaki, Takashi Takeda   +3 more
doaj   +1 more source

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

AIP Advances, 2016
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility.
S. Riedel, P. Polakowski, J. Müller
doaj   +1 more source