Results 101 to 110 of about 821,355 (285)

Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories

Advanced Electronic Materials
Hafnium oxide (HfO2) exhibits multiple polymorphs, each with distinct properties and is a promising material for non‐volatile memory technologies in radiation‐harsh environments.
Philipp Schreyer, David Lehninger, Tobias Vogel, Tianren Zhang, Taewook Kim, Eszter Piros, Yingxin Li, Yu Duan, Maximilian Lederer, Konrad Seidel, Christina Trautmann, Eugenia Toimil‐Molares, Lambert Alff   +12 more
doaj   +1 more source

Orthosilicates with glaserite-type crystal structures: Na2BaZr[SiO4]2 and Na2BaHf[SiO4]2

Acta Crystallographica Section E: Crystallographic Communications
Single crystal particles of Na2BaZr[SiO4]2 [systematic name: disodium barium zirconium bis(orthosilicate)] and Na2BaHf[SiO4]2 [disodium barium hafnium bis(orthosilicate)] were extracted from grain-grown polycrystals obtained by heating compacts of binary
Hisanori Yamane, Shiro Funahashi, Naoto Hirosaki, Takashi Takeda   +3 more
doaj   +1 more source

Extraction and separation of zirconium and hafnium using octanol [PDF]

, 2019
Thesis (PhD)--University of Pretoria, 2019.Zirconium (Zr) and hafnium (Hf) metals have drawn considerable attention due to their various applications, especially in the nuclear industry where zirconium is used as a cladding material for nuclear reactors ...

core  

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

New Insights of Ferroelectric Hf0.5Zr0.5O2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors

Advanced Physics Research
This study offers new insights into the ferroelectric (FE) properties of hafnia‐zirconia (HZO)‐based capacitors across a wide temperature range‐ from room temperature (RT) to cryogenic conditions (40 K)‐ through advanced characterization techniques.
Flavien Berthaud, Niccolo Castellani, Nicolas Vaxelaire, Guillaume Freychet, Amanda Malmann Tonelli, Liam Hosier, Jean Rottner, Catherine Carabasse, Mikael Cassé, Laurent Grenouillet, Simon Martin   +10 more
doaj   +1 more source

Observation of inhomogeneous oxygen distribution in electric-field-cycled Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition

Journal of Advanced Dielectrics
This study investigates the impact of ion distribution, with a particular focus on oxygen ions, on the stability and phase transformation processes of the hafnium zirconium oxide (HZO) ferroelectric phase.
Yilong Liu, Zhe Yu, Yao Wu, Yanjie Zhao, Lu Liu, Shiqing Deng, Shi Liu, Wen Dong   +7 more
doaj   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Correction: Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices. [PDF]

Nanoscale Adv, 2021
Chae K, Kummel AC, Cho K.
europepmc   +1 more source

Refractory Diborides of Zirconium and Hafnium

, 2007
Pyrolyses of chemical precursor systems composed of zirconium or hafnium powders dispersed into blends of the polymethylcarbosilane and poly(norbornenyldecaborane) preceramic polymers provide simple efficient routes to new types of ZrB2/ZrC/SiC and HfB2 ...
Talmy, Inna G., Fahrenholtz, William, Gregory E. Hilmas, James A. Zaykoski, Zaykovski, J. A., Inna G. Talmy, William G. Fahrenholtz, Hilmas, Greg   +7 more
core   +1 more source