Results 91 to 100 of about 821,355 (285)
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
SEPARATION OF HAFNIUM FROM ZIRCONIUM USING TRIBUTYL PHOSPHATE [PDF]
The separation of hafnium from zirconium using tributyl phosphate offers interesting alternatives to present methods for making reactor-grade zirconium. Feed solution for the extraction step can be prepared from the reaction product of caustic and zircon
Cox, R. P. +3 more
core +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Ferroelectric field effect transistors (FeFETs) are among the most promising candidates for the implementation of artificial synapses for neuromorphic computing.
Chiara Rossi +5 more
doaj +1 more source
This review explores emerging 2D materials beyond graphene, including graphdiyne, phosphorene, borophene, siloxene, MBene, antimonene, and germanene for Li/Na–S batteries. It analyzes their roles as sulfur hosts, metallic anode protectors, separators, and electrolyte fillers, emphasizing polysulfide suppression, dendrite inhibition, and interfacial ...
Naveen Kumar T. R +7 more
wiley +1 more source
We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length $(L_{\mathrm { g}})$ of 25 nm.
Kun Zhong +5 more
doaj +1 more source
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility.
S. Riedel, P. Polakowski, J. Müller
doaj +1 more source
Titanium, Zirconium, and Hafnium: Titanium
In aqueous solutions or in other oxidative media free of complexing agents, the surface of Titanium (Ti) reacts readily with its environment to form oxide films of varying composition and stability depending on the pH and the nature of the electrolyte. A
Johnson, James W., James, William Joseph
core
This review redefines radiotherapy‐triggered drug delivery systems through structural disassembly and molecular actuation, proposing a translation‐oriented framework for dose‐correlated activation to advance clinically integrated precision oncology. ABSTRACT Radiotherapy‐triggered drug delivery systems (RDDS) promise to integrate the spatial precision ...
Jianv Jiang +3 more
wiley +1 more source
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings +3 more
wiley +1 more source

