Results 111 to 120 of about 821,355 (285)

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices. [PDF]

Nanoscale Adv, 2021
Chae K, Kummel AC, Cho K.
europepmc   +1 more source

Determination of Hafnium in Zirconium by Spectrophotometry

Zirconium and hafnium have opposite nuclear properties and are used very differently in the nuclear industry. However, hafnium is a common metal impurity in zirconium, and the chemical properties of the two are very similar except for nuclear properties,
Xiuhao Jiao, Xiaotao Lv, Zepeng Lv, Jianxun Song, Shaolong Li   +4 more
core   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

A Millimeter Wave Ferroelectric Hafnium Zirconium Oxide-based Programmable Antenna

In this work, we present an on-chip Hafnium Zirconium Oxide-based millimeter wave (mmWave) programmable antenna. The device exhibits a resonance frequency of 36.623 GHz, which can be programmed by varying the polarization state of a thin Hafnium ...
Casilli, Nicolas,, Cassella, Cristian,, Colombo, Luca,, Jornet, Josep Miquel,, Davaji, Benyamin,, Quaresima, Samuel,, Petrov, Vitaly,   +6 more
core   +1 more source

TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model

Advanced Electronic Materials, EarlyView.
Ferroelectric HZO thin films enable negative differential resistance in calibrated FeCNTFET models, creating stable ternary switching states for compact multi‐valued logic. The resulting device‐to‐architecture framework demonstrates efficient ternary neural‐network accelerators with substantial area and power savings, highlighting ferroelectric CNT ...
Mohammad Khaleqi Qaleh Jooq, Abdolah Amirany, Martin F. Sarott, Beatriz Noheda, Johanna van Gent González, Kian Jafari, Elham Heidari, Mostafa Rahimi Azghadi, Hamed Dalir, Saeed Afshar   +9 more
wiley   +1 more source

Optimization of Sputtered Hafnium Zirconium Oxide Ferroelectrics for Memory Applications

Since the initial publication of ferroelectricity in HfO2 thin films in 2011, numerous theories and models have been proposed to elucidate the root of this phenomenon.
Wang, Xuetao
core   +1 more source

Heterobimetallic Janus Catalysts for the One‐Pot Synthesis of Polar‐Apolar Block Copolymers

Angewandte Chemie, EarlyView.
Heterobimetallic Janus catalysts act as bifunctional initiators, combining two distinct polymerisation mechanisms in one pot to deliver well‐defined apolar‐polar block copolymers. Combining Earth abundant Ti and Al catalysts for respective α‐olefin and lactone polymerisation, the orthogonal activity is enabled by unprecedented initiation from a Ti ...
Raju Chambenahalli, Gary S. Nichol, Jennifer A. Garden   +2 more
wiley   +2 more sources

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma, Yipeng Sun, Duojie Wu, Changhong Wang, Ruizhi Yu, Hui Duan, Matthew Zheng, Ruying Li, M. Danny Gu, Yang Zhao, Jigang Zhou, Xueliang Sun   +11 more
wiley   +1 more source